• Acta Optica Sinica
  • Vol. 34, Issue 11, 1116002 (2014)
Zhang Chunhong1、2、*, Zhang Zhongzheng2、3, Yan Wanjun2、3, Zhou Shiyun2、3, Gui Fang2、3, and Guo Benhua2、3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/aos201434.1116002 Cite this Article Set citation alerts
    Zhang Chunhong, Zhang Zhongzheng, Yan Wanjun, Zhou Shiyun, Gui Fang, Guo Benhua. Study on First Principle of Photoelectrical Properties of Ac Doped β-FeSi2[J]. Acta Optica Sinica, 2014, 34(11): 1116002 Copy Citation Text show less

    Abstract

    By using the first principle pseudo-potential plane-wave method based on the density function theory (DFT), the geometrical structure, electronic structure and optical properties of β-FeSi2 with doping Ac are calculated and analyzed. The calculated results of the geometrical structure show that the lattice constants a, b and c change, the volume of lattice expands. Electronic structure calculation indicates that the Fermi energy moves to conduction band, the band structure is still quasi-direct bandgap, which becomes narrow obviously. The density of state near the Fermi energy level is mainly composed of Fe-3d and Si-3p, Ac-6d only devoted to a small part. Optical properties calculation indicates that the static dielectric constant ε1(0) increases. The peak of the imaginary part of dielectric function ε2 decreases and moves to a lower energy. The refractive index n0 increases significantly and k moves to a lower energy. Optical absorption coefficient increases. The average reflective effect has little change. These results offer theoretical data for doping of β-FeSi2.
    Zhang Chunhong, Zhang Zhongzheng, Yan Wanjun, Zhou Shiyun, Gui Fang, Guo Benhua. Study on First Principle of Photoelectrical Properties of Ac Doped β-FeSi2[J]. Acta Optica Sinica, 2014, 34(11): 1116002
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