[1] R N HALL, G N FENNER, G D KINGSLEY et al. Coherent light emission from GaAs junctions. Physical Review Letter, 9, 366-369(1962).

[2] Z I ALFEROV, M ANDREEVV, D Z GARBUZOV et al. Investigation of the influence of the AlAs-GaAs hetero structure parameters on the laser threshold current and the realization of continuous emission at room temperature. Soviet Physics-Semiconductors, 4, 1573-1575(1970).

[3] R PAOLETTI, S CODATO, C CORIASSO et al. 350 W high-brightness multi-emitter semiconductor laser module emitting at 976 nm(2021).

[4] A BONI, S ARSLAN, G ERBERT et al. Epitaxial design progress for high power, efficiency and brightness in 970 nm broad area lasers(2021).

[5] H LEEY, B TELL, F BROWN-GOEBELERK et al. Deep-red continuous wave top-surface-emitting vertical cavity AlGaAs super lattice lasers. IEEE Photonics Technology Letters, 3, 108-109(1991).

[6] Y ISHIGE, H HASHIMOTO, N HAYAMIZU et al. Blue laser-assisted kW-class CW NIR fiber laser system for high quality copper welding(2021).

[7] P F MCMANAMON, P S BANKS, J D BECK et al. Comparisonof flash lidar detector options. Optical Engineering, 56, 031223(2017).

[8] H SODA, K IGA, C KITAHARA et al. GaInAsP/InP surface emitting injection lasers. Japanese Journal of Applied Physics, 18, 2329(1979).

[9] K IGA. Forty years of vertical-cavity surface-emitting laser: invention and innovation. Japanese Journal of Applied Physics, 57, 08PA01(2018).

[10] K IGA. Surface-emitting laser-its birth and generation of new optoelectronics field. IEEE Journal of Selected Topics in Quantum Electronics, 6, 1201-1215(2000).

[11] Jiye ZHANG, Jianwei ZHANG, Zhuo ZHANG et al. High-power vertical external-cavity surface-emitting laser emitting switchable wavelengths. Optics Express, 28, 32612(2020).

[12] Y LEE, J JEWELL, A SCHERER et al. Room temperature continuous wave vertical cavity surface emitting laser single quantum well micro laser diode. Electronics Letters, 25, 1377-1378(1989).

[13] A LOTTJ, N LEDENTSOVN, M USTINOVV et al. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm. Electronics Letters, 36, 1384-1385(2000).

[14] T H OH, O B SHCHEKIN, D G DEPPE. Single-mode operation in an anti guided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture. IEEE Photonics Technology Letters, 10, 1064-1066(1998).

[15] T H OH, D L HUFFAKER, D G DEPPE. Comparison of vertical-cavity surface-emitting lasers with half-wave cavity spacers confined by single-or double-oxide apertures. IEEE Photonics Technology Letters, 9, 875-877(1997).

[16] A HIGUCHI, H NAITO, K TORII et al. High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture. Optics Express, 20, 4206-4212(2012).

[17] G BOEHM, M ORTSIEFER, R SHAU et al. InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 μm. Journal of Crystal Growth, 251, 748-753(2003).

[18] H NAITO, M MIYAMOTO, Y AOKI et al. Development of a high-power vertical-cavity surface-emitting laser array with ion-implanted current apertures(2013).

[19] M MULLER, W HOFMANN, G BOHM et al. Short-cavity long-wavelength VCSELs with modulation bandwidths in excess of 15 GHz. IEEE Photonics Technology Letters, 21, 1615-1617(2009).

[20] J F SEURIN, C L GHOSH, V KHALFIN et al. High-power vertical-cavity surface-emitting arrays(2008).

[21] J KITCHING, S KNAPPE, M VUKICEVIC et al. A microwave frequency reference based on VCSEL-driven dark line resonances in Cs vapor. IEEE Transactions on Instrumentation and Measurement, 49, 1313-1317(2000).

[22] D VEZ, S EITEL, S G HUNZIKER et al. 10-Gbit/s VCSELs for datacom: Devices and applications(2003).

[23] A PRUIJMBOOM, R APETZ, R CONRADS et al. Vertical-cavity surface emitting laser-diodes arrays expanding the range of high-power laser systems and applications. Journal of Laser Applications, 28, 032005(2016).

[24] R YADAV, P A ALVI. Temperature dependence of material gain of InGaAsP/InP nano-heterostructure, 1591, 1419-1421(2014).

[25] M A LADUGIN, A A MARMALYUK. Effect of (Al) GaAs/AlGaAs quantum confinement region parameters on the threshold current density of laser diodes. Quantum Electronics, 49, 529(2019).

[26] H WENZEL, P CRUMP, A PIETRZAK et al. The analysis of factors limiting the maximum output power of broad-area laser diodes. Optical and quantum electronics, 41, 645-652(2009).

[27] D I BABIC, S W CORZINE. Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors. IEEE Journal of Quantum Electronics, 28, 514-524(1992).

[28] J FAIST, F K REINHART. Phase modulation in GaAs/AlGaAs double heterostructures. I. Theory. Journal of Applied Physics, 67, 6998-7005(1990).

[29] T KAUL, G ERBERT, A MAAßDORF et al. Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs. Semiconductor Science and Technology, 33, 035005(2018).

[30] J W BAE, G SHTENGEL, D KUKSENKOV et al. Threshold carrier density in vertical cavity surface emitting lasers. Applied Physics Letters, 66, 2031-2033(1995).

[31] K D CHOQUETTE, R P SCHNEIDER, K L LEAR et al. Gain-dependent polarization properties of vertical-cavity lasers. IEEE Journal of Selected Topics in Quantum Electronics, 1, 661-666(1995).

[32] S A BLOKHIN, M A BOBROV, N A MALEEV et al. Impact of a large negative gain-to-cavity wavelength detuning on the performance of InGaAlAs oxide-confined vertical-cavity surface-emitting lasers(2015).

[33] Jianwei ZHANG, Xing ZHANG, Hongbo ZHU et al. High-temperature operating 894.6 nm-VCSELs with extremely low threshold for Cs-based chip scale atomic clocks. Optics Express, 23, 14763-14773(2015).

[34] N CYR, M TETU, M BRETON. All-optical microwave frequency standard: a proposal. IEEE Transactions on Instrumentation and Measurement, 42, 640-649(1993).

[35] J KITCHING, S KNAPPE, L LIEW et al. Micro fabricated atomic clocks, 1-7(2005).

[36] P D D SCHWINDT, S KNAPPE, V SHAH et al. Chip-scale atomic magnetometer. Applied Physics Letters, 85, 6409-6411(2004).

[37] D K SERKLAND, K M GEIB, G M PEAKE et al. VCSELs for atomic sensors(2007).

[38] N A MALEEV, S A BLOKHIN, M A BOBROV et al. Laser source for a compact nuclear magnetic resonance gyroscope. Gyroscopy and Navigation, 9, 177-182(2018).

[39] Xing ZHANG, Yi ZHANG, Jianwei ZHANG et al. Application of 894 nm high temperature vertical cavity surface emitting laser and its chip-scale cesium atomic clock system. Acta Physica Sinica, 65, 134204(2016).

[40] Runchang DU, lin YANG, Haiqing ZHAO. The current situation and development of chip atomic clocks. Navigation Positioning and Timing, 2, 34-38(2015).

[41] Zhinan WU, Zhengqin ZHAO, Zhongpin WEN et al. Research progress of high-sensitivity miniature optical atomic magnetometer. Laser & Optoelectronics Progress, 57, 230002(2020).

[42] PROUTYM . Advances in atomic magnetometers(2009).

[43] T G WALKER, M S LARSEN. Spin-exchange pumped NMR gyros. Advances in Atomic, Molecular, and Optical Physics, 65, 373(2016).

[44] A AL-SAMANEH. VCSELs for atomic clock demonstrators(2013).

[45] P C CHUI, S F YU. Second harmonic distortion in vertical cavity surface emitting lasers with lateral loss effect. IEEE Journal of Selected Topics in Quantum Electronics, 5, 546-552(1999).

[46] S F YU. Dynamic behavior of vertical cavity surface emitting lasers. IEEE Journal of Quantum Electronics, 32, 1168(1996).

[47] C J CHANG-HASNAIN, J P HARBISON, G HASNAIN et al. Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers. IEEE Journal of Quantum Electronics, 27, 1402(1991).

[48] D K SERKLAND, G M PEAKE, K M GEIB et al. VCSELs for atomic clocks(2006).

[49] A KEELERG, K M GEIB, D K SERKLAND et al. VCSEL polarization control for chip-scale atomic clocks(2007).

[50] D K SERKLAND, T J MORIN, A J GRINE et al. All-semiconductor coupled-cavity VCSELs for narrow linewidth, 1-2(2018).

[51] D K SERKLAND, T J MORIN, H M SO et al. Narrow-linewidth VCSELs based on multi-mirror cavities (Conference resentation), 11300, 1130008(2020).

[52] D K SERKLAND, G A KEELER, K M GEIB et al. Narrow linewidth VCSELs for high-resolution spectroscopy(2009).

[53] D WAHL, D SETZ, A AL-SAMANEH. Development of VCSELs for atomic clock applications. Annual Report, 49-54(2008).

[54] A AL-SAMANEH, S RENZ, A STRODL et al. Polarization-stable single-mode VCSELs for Cs-based MEMS atomic clock applications, 7720, 772006(2010).

[55] A AL-SAMANEH, M B SANAYEH, S RENZ et al. Polarization control and dynamic properties of VCSELs for MEMS atomic clock applications. IEEE Photonics Technology Letters, 23, 1049-1051(2011).

[56] A AL-SAMANEH, SANAYEH MBOU, M J MIAH et al. Polarization-stable vertical-cavity surface-emitting lasers with inverted grating relief for use in microscale atomic clocks. Applied Physics Letters, 101, 171104(2012).

[57] F GRUET, A AL-SAMANEH, É KROEMER et al. Metrological characterization of custom-designed 894.6 nm VCSELs for miniature atomic clocks. Optics Express, 21, 5781-5792(2013).

[58] M J MIAH, A AL-SAMANEH, A KERN et al. Fabrication and characterization of low-threshold polarization-stable VCSELs for Cs-based miniaturized atomic clocks. IEEE Journal of Selected Topics in Quantum Electronics, 19, 1701410(2013).

[59] I A DEREBEZOV, V A HAISLER, A K BAKAROV et al. Single-mode vertical-cavity surface-emitting lasers for atomic clocks. Optoelectronics, Instrumentation and Data Processing, 45, 361-366(2009).

[60] I A DEREBEZOV, V A HAISLER, A K BAKAROV et al. Single-mode vertical-cavity surface emitting lasers for 87Rb-based chip-scale atomic clock. Semiconductors, 44, 1422-1426(2010).

[61] S A BLOKHIN, M A BOBROV, A G KUZ’MENKOV et al. The influence of cavity design on the linewidth of near-IR single-mode vertical-cavity surface-emitting lasers. Technical Physics Letters, 44, 28-31(2018).

[64] Jian ZHANG, Yongqiang NING, Yugang ZENG et al. Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks. Laser Physics Letters, 10, 045802(2013).

[65] Lei XIANG, Xing ZHANG, Jianwei ZHANG et al. Stable single-mode operation of 894.6 nm VCSEL at high temperatures for Cs atomic sensing. Chinese Physics B, 26, 074209(2017).

[66] Lei XIANG, Xing ZHANG, Jianwei ZHANG et al. VCSEL mode and polarization control by an elliptic dielectric mode filter. Applied Optics, 57, 8467-8471(2018).

[67] Jiye ZHANG, Jianwei ZHANG, Xing ZHANG et al. Polarization-controlled and single-transverse-mode vertical-cavity surface-emitting lasers with eye-shaped oxide aperture. Japanese Journal of Applied Physics, 57, 120309(2018).

[68] Jiye HANG, Jianwei ZHANG, Xing ZHANG et al. Asymmetric oxide apertures of vertical-cavity surface-emitting lasers fabricated by unsymmetrical wet oxidation and its polarization control. Optics & Laser Technology, 139, 106948(2021).

[69] Xue LI, Yinli ZHOU, Xing ZHANG et al. High-power single-mode 894 nm VCSELs operating at high temperature (> 2 mW@ 365 K). Applied Physics B, 128, 1-6(2022).

[71] Y R SUN, J R DONG, Y M ZHAO et al. The fabrication and lasing characteristics of oxide-confined 795 nm VCSELs with close and open isolation trenches. Optical and Quantum Electronics, 49, 1-11(2017).

[72] Ming LI, Qiuhua WANG, Pingping QIU et al. 894nm high orthogonal polarization suppression ratio vertical cavity surface emitting laser, 11300, 113000W(2020).

[73] Pingping QIU, Bo WU, Ming LI et al. Low threshold current single mode 894 nm VCSELs with SiO2/Si3N4 dielectric DBRs(2020).

[74] Pingping QIU, Bo WU, Pan FU et al. Realization of single-transverse-mode VCSELs incorporating a built-in index guide. Optics Communications, 504, 127450(2022).

[75] Fuling ZHANG, Lishan FU, Peili HU et al. Ultra-narrow linewidth characteristics of a 795 nm sub-wavelength grating coupling chamber vertical cavity surface emitting lasers. Acta Physica Sinica, 70, 113-119(2021).

[76] O STEVENS. The history of datacom/DB. IEEE Annals of the History of Computing, 31, 87-91(2009).

[77] B D NOTOHARDJONO, R R SCHMIDT, S M CANFIELD. Seismic considerations for datacom equipment, 112, 632(2006).

[78] M DAYARATHNA, Y WEN, R FAN. Data center energy consumption modeling: A survey. IEEE Communications Surveys & Tutorials, 18, 732-794(2015).

[79] CK LIN, P BOURD, J ZHU et al. High temperature continuous-wave operation of1.3-1.55um vcsels with inp/air-gap dbrs(2002).

[80] N NISHIYAMA, A MIZUTANI, N HATORI et al. Single-transverse mode and stable-polarization operation under high-speed modulation of InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs (311) B substrate. IEEE Photonics Technology Letters, 10, 1676-1678(1998).

[81] J S HARRIS, T O'SULLIVAN, T SARMIENTO et al. Emerging applications for vertical cavity surface emitting lasers. Semiconductor Science and Technology, 26, 014010(2010).

[82] A MUTIG, G FIOL, P MOSER et al. 120 C 20 Gbit/s operation of 980 nm single mode VCSEL(2008).

[83] W HOFMANN, P MOSER, P WOLF et al. 44 Gb/s VCSEL for optical interconnects(2011).

[84] L A GRAHAM, H CHEN, D GAZULA et al. The next generation of high speed VCSELs at Finisar, 8276, 827602(2012).

[85] C XIE, N LIN, S HUANG et al. The next generation high data rate vcsel development at sedu(2013).

[86] P WESTBERGH, R SAFAISINI, E HAGLUND et al. High-speed oxide confined 850-nm VCSELs operating error-free at 40 Gb/s up to 85 ℃. IEEE Photonics Technology Letters, 25, 768-771(2013).

[87] J W SHI, J C YAN, J M WUN et al. Oxide-relief and Zn-diffusion 850-nm vertical-cavity surface-emitting lasers with extremely low energy-to-data-rate ratios for 40 Gbit/s operations. IEEE Journal of Selected Topics in Quantum Electronics, 19, 7900208(2012).

[88] P MOSER, J A LOTT, P WOLF et al. Error-free 46 Gbit/s operation of oxide-confined 980 nm VCSELs at 85 ℃. Electronics Letters, 50, 1369-1371(2014).

[89] H LI, P WOLF, P MOSER et al. Energy-efficient and temperature-stable oxide-confined 980 nm VCSELs operating error-free at 38 Gbit/s at 85 ℃. Electronics Letters, 50, 103-105(2014).

[90] H LI, P WOLF, P MOSER et al. Temperature-stable 980-nm VCSELs for 35-Gb/s operation at 85 ℃ with 139-fJ/bit dissipated heat. IEEE Photonics Technology Letters, 26, 2349-2352(2014).

[91] D M KUCHTA, A V RYLYAKOV, C L SCHOW et al. A 50 Gb/s NRZ modulated 850 nm VCSEL transmitter operating error free to 90 ℃. Journal of Lightwave Technology, 33, 802-810(2015).

[92] K L CHI, J L YEN, J M WUN et al. Strong wavelength detuning of 850 nm vertical-cavity surface-emitting lasers for high-speed (> 40 Gbit/s) and low-energy consumption operation. IEEE Journal of Selected Topics in Quantum Electronics, 21, 470-479(2015).

[93] M LIU, C Y WANG, M FENG et al. 850 nm oxide-confined vcsels with 50 gb/s error-free transmission operating up to 85 ℃(2016).

[94] G LARISCH, P MOSER, J A LOTT et al. Impact of photon lifetime on the temperature stability of 50 Gb/s 980 nm VCSELs. IEEE Photonics Technology Letters, 28, 2327-2330(2016).

[95] E SIMPANEN, J S GUSTAVSSON, E HAGLUND et al. 1060 nm single-mode vertical-cavity surface-emitting laser operating at 50 Gbit/s data rate. Electronics Letters, 53, 869-871(2017).

[96] M AGUSTÍN, J R KROPP, V A SHCHUKIN et al. Temperature stable oxide-confined 850-nm VCSELs operating at bit rates up to 25 Gbit/s at 150 ℃(2018).

[97] N LEDENTSOV, L CHORCHOS, O MAKAROV et al. Quantum-dot oxide-confined 850-nm VCSELs with extreme temperature stability operating at 25 Gbit/s up to 180 ℃(2020).