The Vertical Cavity Surface Emitting Semiconductor Laser (VCSEL) has the unique advantages of circular symmetricalspot morphology, two-dimensional integration, narrow spectral width and small size et al. In particular, the wavelength of VCSEL laser is hardly changed with temperatures (0.06 nm/℃), also the output window of VCSEL has no Catastrophic Optical Mirror Damage(COMD), and thus the VCSEL can behave excellent performance in the high temperature environment with strict working temperature requirements. This paper mainly introduces the structure and operation principle of VCSEL, and the temperature stability characteristics of laser cavity mode and gain is analyzed when the VCSEL works at high temperatures. The alkali metal atomused in the precisequantum measurement can be pumped by high-temperature operating VCSELs. And the development of VCSELs for this application is introduced and reviewed. By adjusting the position of gain spectrum and the cavity mode of oscillation cavity, the increase of power consumption of VCSEL at high temperatures can be effectively suppressed. Through the integrated surface mode filter, the stable selection of the internal mode of VCSEL can be realized. The internal mode and polarization of VCSEL laser can be controlled at the same time by using the surface grating structure. The above reports have realized good performance of VCSEL at high temperatures. In the future, using nanostructure or external cavity to compress the linewidth level of VCSEL laser will be an important research field.The demand for high-temperature and high-speed VCSEL laser is also reviewed. And this VCSEL is mainly used in the datacenter, which is the basic for the 4G and 5G communications. As the huge energy consumption in datacenter becomes a serious problem. High-temperature operating VCSELs may relieve this problem. High-temperature and high-speed performance are the main research directions of VCSELs used in the datacenter. Based on the commonVCSEL structure, the working temperature of high-speed VCSEL can be increased to 150 ℃ by using conventional quantum well. The operating temperature of high-speed VCSEL can even be increased to 180 ℃ by using quantum dot active regions. VCSEL lasers with higher rate at high temperature need to make a breakthrough in the structure of quantum dot materials. In addition, using surface nanostructure instead of the existing DBR can effectively reduce the resistance of the traditional VCSEL, and further improve the modulation rate of VCSEL at high temperatures.