Author Affiliations
1Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China2University of Science and Technology of China, Hefei 230026, China3V.E Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Kyiv 03028, Ukraineshow less
1. Crystal structures of (a) single (AB
2+X
3) and (b) double (A
2B
+B
3+X
6) halide perovskite
[5] 2. Optoelectronic properties of halide perovskites. (a) Photoluminescence spectra of mixed halide perovskites
[17]; (b) Trap densities and carrier mobilities of MAPbI
3 single crystals grown by solution method
[22]; (c) Extracted carrier lifetime of MAPbI
3 polycrystalline (MPC) film and single crystal (MSC) by EIS study
[23]; (d) Extracted carrier lifetime of MAPbI
3 single crystal (TPV decay curves)
[23]; (e) Absorption coefficients versus photon energy of X/γ-ray
[30]; (f) Thickness dependent attenuation efficiencies to X-ray photons with energy of 50 keV
[30] 3. Schematic illustration of direct and indirect radiation detectors, as well as relaxation kinetics of X/γ-ray photons generated carriers in halide perovskite (①-④ represent the interaction process between rays and materials)
4. Development of halide perovskite based radiation detectors
[19-21, 30, 32-34] 5. (a) Time-resolved photocurrent of MAPbI
3 film based detector under 37 keV X-ray
[21]; (b) Photocurrent of MAPbBr
3 single crystal detector
versus dose of 50 keV X-ray
[19] 6. Response characteristics of Cs
2AgBiBr
6 single crystal (2 mm thickness) based X-ray (30 keV) detector. (a) X-ray photocurrent and gain factor as a function of dose rate
[30]; (b) Temperature dependence of detector sensitivity with inset showing the photograph of single crystal device
[64] 7. X-ray images of (a) leaf and electronic chip
[21]; (b) A hand phantom
[33]; (c) An encapsulated metallic spring and a portion of a fish caudal fin
[81]; (d) Cs
2AgBiBr
6/PVA composite film based flexible X-ray detector
[30,82] 8. γ-ray spectroscopy of single crystal based organic-inorganic hybrid perovskite detector. (a) The bias dependence of the photocurrent generated by Cu K
α X-ray in a FAPbI
3 single crystal
[20]; (b) Energy spectroscopy curve of single crystal detector for
241Am
[20]; (c) MAPbI
3 single crystal photo and the spectral response of
57Co
[83]; (d) The spectral response of MAPcBr
2.94Cl
0.06 detector, CZT, NaI (Tl) detector to
137Cs
[84] 9. (a) γ-ray energy spectrum of CsPbBr
3 single crystal grown by Bridgman method toward
137Cs
[85]; (b) Linear response range of the detector
[85]; (c) Portable (FA/Cs)Pb(I/Br)
3 γ-ray spectrometer
[86] 1: single crystal probe, 2: preamplifier, 3: amplifier, 4: display, 5: ray source, 6: battery
10. CsPbX
3 quantum dot based halide perovskite scintillation detector
[87]. (a) Schematic representation of X-ray-induced luminescence; (b) Transmission electron microscopy image of the as-aynthesized CsPbBr
3 nanocrystals; (c) Tunable luminescence spectra of CsPbX
3 quantum dots under X-ray irradiation at 50 keV (dose rate of 278 μGy·s
-1); (d) Comparison of the optical sensitivity of various scintillator materials in response to exposure to X-rays produced at a voltage of 10 kV; (e) CIE chromaticity coordinates of the X-ray-induced visible emissions of 12 CsPbX
3 samples; (f) Multicolour X-ray scintillation from 3 types of perovskite nanocrystal scintillator; (g) CsPbBr
3-based scintillator as a function of dose rate; (h) Measured radioluminescence decay of the CsPbBr
3-based scintillator under excitation with a
137Cs source
Compound | Dose/(μC·Gy·s-1) | Sensitivity/(μC·Gy-1·cm-2) | Energy/keV | μτ/(cm2·V-1) | Mobility/(cm2·V-1·s-1) | Resistivity/(Ω·cm) | Ref. |
---|
MAPbI3 (film) | - | 2.5×104 | 8 | 2×10-7 | - | - | [21] | MAPbBr3 (single crystal) | 0.5 | 80 | 50 | 1.2×10-2 | - | - | [19] | MAPbBr3/Si | - | 2.1×104 | 8 | - | 201 | - | [81] | Cs2AgBiBr6 (single crystal) | 0.0597 | - | | 6.3×10-3 | 11.81 | - | [30] | Cs2AgBiBr6 (single crystal) | 0.0597 | 105 | 50 | - | - | 3.6×1012 | [64] |
|
Table 1. Comparison of perovskite X/γ-ray detectors
Compound | Growth method | Thickness/mm | Electrode | μτ/(cm2·V-1) | Resistivity/(Ω·cm) | Electric field/(V∙mm-1) | Energy resolution | Ref. |
---|
MAPbI3 | ITC | 3 | - | (1.0-1.8)×10-2 | - | 3 | 35% for 241Am | [20] | MAPb Br2.94Cl0.06 | ITC | 2-2.4 | Cr/C60/BCP/PVK/Cr | 1.8×10-2 | 3.6×109 | 1.8 | 24% for 137Cs | [84] | MAPbI3 | ITC | 1.52 | Ga/PVK/Au | 8×10-4 | 108-109 | 33-46 | 6.8% for 57Co | [83] | CsPbBr3 | Bridgman | 0.9-3 | Ga/PVK/Au | 1.34×10-3 | - | 167 | 3.9% for 57Co3.8% for 137Cs | [85] |
|
Table 2. Halide γ-ray detector energy spectroscopy detection summary (ITC: Inverse temperature gradient crystallization)