• Journal of Infrared and Millimeter Waves
  • Vol. 43, Issue 6, 749 (2024)
Um E HABIBA1,2, Tian-Ye CHEN1,5, Chi-Xian LIU1,5, Wei DOU1,5..., Xiao-Yan LIU1,3, Jing-Wei LING1, Chang-Yi PAN1,3, Peng WANG1,2, Hui-Yong DENG1,2,4,*, Hong SHEN1,2,** and Ning DAI1,2,3,4,***|Show fewer author(s)
Author Affiliations
  • 1State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 2University of Chinese Academy of Sciences,Beijing 100049,China
  • 3College of Physics and Optoelectronic Engineering,Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
  • 4Zhejiang Laboratory,Hangzhou 311100,China
  • 5School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China
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    DOI: 10.11972/j.issn.1001-9014.2024.06.004 Cite this Article
    Um E HABIBA, Tian-Ye CHEN, Chi-Xian LIU, Wei DOU, Xiao-Yan LIU, Jing-Wei LING, Chang-Yi PAN, Peng WANG, Hui-Yong DENG, Hong SHEN, Ning DAI. Ion implantation process and lattice damage mechanism of boron doped crystalline germanium[J]. Journal of Infrared and Millimeter Waves, 2024, 43(6): 749 Copy Citation Text show less
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    Um E HABIBA, Tian-Ye CHEN, Chi-Xian LIU, Wei DOU, Xiao-Yan LIU, Jing-Wei LING, Chang-Yi PAN, Peng WANG, Hui-Yong DENG, Hong SHEN, Ning DAI. Ion implantation process and lattice damage mechanism of boron doped crystalline germanium[J]. Journal of Infrared and Millimeter Waves, 2024, 43(6): 749
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