Near-Infrared Photoluminescence with Different Excitation Intensity of Heteroepitaxial GaAs Layers Grown on Si Substrates

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 15 >Issue 4 >Page 468 > Article

Acta Optica Sinica
Vol. 15, Issue 4, 468 (1995)

Near-Infrared Photoluminescence with Different Excitation Intensity of Heteroepitaxial GaAs Layers Grown on Si Substrates

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]³, [in Chinese]³, and [in Chinese]³

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Near-Infrared Photoluminescence with Different Excitation Intensity of Heteroepitaxial GaAs Layers Grown on Si Substrates[J]. Acta Optica Sinica, 1995, 15(4): 468 Copy Citation Text

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