Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AlGaN underlayer in a 290 nm UV-LED

Yufeng Li; Chenyu Wang; Ye Zhang; Peng Hu; Shengnan Zhang; Mengqi Du; Xilin Su; Qiang Li; Feng Yun

doi:10.1364/PRJ.387607

Journals >Photonics Research >Volume 8 >Issue 6 >Page 806 > Article

Photonics Research
Vol. 8, Issue 6, 806 (2020)

Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AlGaN underlayer in a 290 nm UV-LED | Editors' Pick

Yufeng Li¹, Chenyu Wang¹, Ye Zhang^1、2, Peng Hu¹, Shengnan Zhang², Mengqi Du², Xilin Su², Qiang Li², and Feng Yun^1、2、*

Author Affiliations

¹Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an 710049, China

²Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an 710049, China

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DOI: 10.1364/PRJ.387607 Cite this Article Set citation alerts

Yufeng Li, Chenyu Wang, Ye Zhang, Peng Hu, Shengnan Zhang, Mengqi Du, Xilin Su, Qiang Li, Feng Yun. Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AlGaN underlayer in a 290 nm UV-LED[J]. Photonics Research, 2020, 8(6): 806 Copy Citation Text

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