[1] RAZEGHI M,ROGALSKI A.Semiconductor ultraviolet detectors[J].Journal of Applied Physics,1996,79(10):7433-7473.
[2] PANKOVE J I.GaN:from fundamentals to applications[J].Mater Sci Eng,1999,B61-62:305-309.
[3] PEARTON S J,ZOLPER J C,SHUL R J,et al.GaN:processing,defects,and devices[J].Journal of Applied Physics,1999,86 (1):1-78.
[4] LIU Q Z,LAU S S.A review of the metal-GaN contact technology[J].Solid-State Electron,1998,42(5):677-691.
[5] MUNOZ E,MONROY E,PAU J L,et al.(Al,Ga)N ultraviolet photodetectors and applications[J].Phys Stat Sol (a),2000,180:293-301.
[6] DAVIS R F,EINFELDT S,PREBLE E A,et al.Gallium nitride and related materials:challenges in materials processing[J].Acta Materialia,2003,51 (19):5961-5979.
[7] BIYIKLI N,KARTALOGLU T,AYTUR O,et al.High-performance solar-blind AlGaN Schottky photodiodes[J].MRS Internet J Nitride Semicond Res,2003,8(2):1-4.
[8] BROWN J D,YU Z H,MATTEWS J,et al.Visible-blind UV digital camera based on a 32 ×32 array of GaN/AlGaN p-i-n photodiodes[J].MRS Internet J Nitride Semicond Res,1999,4(9):1-5.
[9] BROWN J D,BONEY J,MATTEWS Let al.UV-specific(320-365 nm)digital camera based on 128×128 focal plance array of GaN/AlGaN p-i-n photodiodes[J].MRS Internet J Nitride Semicond Res,2000,5(6):1-4.
[10] MCCLINTOCK R,MAYES K,YANSAN A,et al.320×256 solarblind focal plane arrays based on AlxGa1-xN[J].Appl Phys Lett,2005,86(1):011117.