ZHU ZHUBIAO, YAN GUANGGAO, ZHENG YISHAN. Transient rf optogalvanic effect of Ne at low pressure[J]. Acta Optica Sinica, 1985, 5(9): 841
Copy Citation Text
Experimental results on transient rf optogalvanic effect of Ne at low pressure are presented. Since there is no cathode in a rf discharge, the cathode effects are eliminated, Absorption and fluorescence spectra of the sample obtained simultaneously on such apparatus illustrate that the direct photoionization by high-energy photons plays an important role in the optogalvanic effect.