[1] Zutavern F J, Loubriel G M, O′Malley M W et al.。 Characteristics of current filamentation in high gain photoconductive semiconductor switching[R]. IEEE Power Modulator Symposium, Myrtle Beach: SC, Conference Record of the 1992 Twentieth: 305～311

[2] Loubriel G M, Zutavern F J, Hjalmarson H P et al.. Measurement of the velocity of current filaments in optically triggered, high gain GaAs switches[J]. Appl. Phys. Lett., 1994, 64(24): 3323～3325

[3] Loubriel G M, Zutavern F J, Mar A et al.. Longevity of optically activated, high gain GaAs photoconductive semiconductor switches[J]. Plasma Science, IEEE, 1998, Transactions on 26: 1393～1402

[4] Zutavern F J, Baca A G, Chow W W et al.. Electron-hole plasmas in semiconductors[J]. IEEE Pulsed Power Plasma Science, 2001, 1: 289～293

[5] Capps C D, Falk R A, Adams J C. Time-dependent model of an optically triggered GaAs switch[J]. J. Appl. Phys., 1993, 74(11): 6645～6654

[6] Zhao H, Hadizad P, Hur J H et al.. Avalanche injection model for the lock-on effect in high power Photoconductive switches[J]. J. Appl. Phys., 1993, 73(4): 1807～1812

[7] Stout P J, Kushner M J. Modeling of high power semiconductor switches operated in the nonlinear mode[J]. J. Appl. Phys., 1996, 79(4): 2084～2090

[8] Kambourt K, Hjalmarson H P, Zutavern F J et al.. Simulation of current filaments in photoconductive semiconductor switches[R]. Proc. 15th International IEEE Pulsed Power Conference, Monterey, CA, 2005. 814～817

[9] Blakemore J S. Semiconducting and other major properties of gallium arsenide[J]. J. Appl. Phys., 1982, 53(10): R123～R181

[10] Kroemer H. Detailed theory of the negative conductance of bulk negative mobility amplifiers, in the limit of zero ion density[J]. IEEE, Transactions on Electron Devices, 1967, ED-14: 476～492

[11] Lee C H. Picosecond optoelectronic switching in GaAs[J]. Appl. Phys. Lett., 1977, 30(2): 84～86

[12] Southgate P D. Recombination processes following impact ionization by high-field domains in Gallium Arsenide[J]. J. Appl. Phys., 1967, 38(12): 4589～4595

[13] Rao Haibo, Liao Yun, Cheng Jiangbo et al.. Laser diode-pumped passively Q-switched monolithic microchip laser based on liquid phase epitaxy[J]. Acta Optica Sinica, 2007, 27(1): 90～93

[14] Wang Yanhai, Wang Jiangfeng, Li Xuechun. Laser pulse shaping and modification techniques in front-end of high-power laser facility[J]. Acta Optica Sinica, 2007, 27(3): 477～481

[15] Ma Xiaohui, Wan Chunming, Shi Quanlin et al.. Fiber-coupled high power laser diode by polarization multiplexing[J]. Chinese J. Lasers, 2007, 34(10): 1343～1346

[16] Gao Xin, Bo Baohue, Zhang Jing et al.. High brightness operation of fiber coupling multiplex diode lasers[J]. Chinese J. Lasers, 2007, 34(11): 1472～1475

[17] Wang Jun, Bai Yiming, Chong Feng et al.. High power laser diode array with 60% electro-optical efficiency[J]. Chinese J. Lasers, 2008, 35(9): 1323～1327