Author Affiliations
1School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China2Beijing Institute of Spacecraft Environment Engineering, Beijing 100094, China3National Key Laboratory of Science and Technology on Reliability and Environment Engineering, Beijing 100094, China4Department of Precision Instrument, Tsinghua University, Beijing 100091, Chinashow less
Fig. 1. Schematic of solar EUV normal-incidence imaging spectrometer. (a) Rowland circle mounting; (b) non-Rowland circle mounting
Fig. 2. Schematic of aberration-corrected TVLS grating
Fig. 3. Schematic of optical layout of solar EUV broadband imaging spectrometer. (a) Two-dimensional optical layout; (b) three-dimensional model diagram
Fig. 4. Curve of the ruling density distribution of TVLS grating
Fig. 5. Ray tracing results. (a)-(c) RMS spots radii change with wavelengths under different off-axis FOV; (d) RMS spots radii versus FOV in the different wavelengths
Fig. 6. MTFs of optical system under different wavelengths. (a) λ=40 nm; (b) λ=53 nm; (c) λ=60 nm; (d) λ=73 nm
Fig. 7. Spectral resolution of system change with wavelength. (a) 40-47 nm; (b) 53-60 nm; (c) 66-73 nm
Fig. 8. Ray tracing module for different line-pairs spectral images
Fig. 9. Spectrum of line pairs imaged on three CCDs. (a) CCD-1; (b) CCD-2; (c) CCD-3
Fig. 10. Diffraction enclosed circle energy used to evaluate system's spatial resolution. (a) λ=43.5 nm; (b) λ=56.5 nm; (c) λ=69.5 nm
Fig. 11. Reflectance curve of SiC/Al multilayer film obtained by simulation change with wavelength
Fig. 12. TVLS grating efficiency and CCD quantum efficiency change with wavelength. (a) Grating efficiency; (b) CCD quantum efficiency
Fig. 13. Instrument effective area change with wavelength. (a) Proposed instrument; (b) Solar Orbiter/SPICE
Instrument | Wavelength /nm | SlitFOV /(') | Spectralresolution /(10-4 nm) | Spatialresolution /(″) | Gratings | Spectralmagnification |
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HiRES | 51-63 | 3 | 69 | 0.4 | TULS | 1.0× | Hinode /EIS | 17-21 & 25-29 | 8.5 | 47&22 | 1.0 | TULS | 1.4× | SPICE | 70.4-79 & 97.3-104.9 | 13 | 95&83 | 1.1 | TVLS | 5.5× | Proposeddesign | 40-47 & 53-60 &66-73 | 18 | < 30 | < 0.60 | TVLS | 4.0× |
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Table 1. Technical indicators of solar EUV imaging spectrometers
Term | Aberration |
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F10 and F01 | Basic grating equation | F20 | Tangential astigmatism | F02 | Sagittal astigmatism | F11 | Off-axis defocusing | F30 and F21 | Coma | F12 | Slit curvature | F40, F22, and F04 | Spherical aberration |
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Table 2. Fjk and its corresponding aberrations
Ion | Wavelength /nm | log Tmax /K | log Ne /cm-3 |
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Mg VI | 40.331 | 5.63 | >10 | Ne V | 41.620 | 5.67 | 8-10 | Mg VIII | 43.047/43.662 | 4.52 | 8-10 | O IV | 55.451 | 5.24 | 7-8.5 | Si IX | 69.469 | 6.05 | >11 | Mg IX | 70.604 | 5.99 | 9.2-10.5 | Fe XX | 72.155 | 6.92 | >10 |
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Table 3. Examples of temperature and density for diagnostic plasma line in the observed spectral region
Specification |
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Anastigmatic spectralrange /nm | 40-47 & 53-60 & 66-73 | IFOV/[(″)×(') ] | 0.54×18 | Scanning FOV / (') | ± 5 | Spectralresolution /(10-4 nm) | 24.9-26.9 | Spatial resolution /(″) | 0.54 | System focal length /mm | 5200 | Detector /μm | 13.5,2048×3072 | Telescope design | RT /mm | 2664 | Conic | -1.33 | Δ /mm | 95 | Spectral imaging system design | Slit size /(μm×mm) | 3.2×7 | 1/d0 /mm-1 | 3000 | m | +1 order | Grating parameter | Initial | Optimum | β | 4× | 3.986× | i /(°) | 1.925 | 1.931 | rA /mm | 387.000 | 387.325 | R /mm | 620.397 | 619.992 | ρ /mm | 616.216 | 616.673 | b2 | 0.0658 | 0.0671 | Groove density /( groove·mm-1) | 3000±13 | Ruling area /mm2 | π×20×20 | Three independent detectors design | CCD | Wavelength /nm | ψ /(°) | CCD-1 | 40-47 | 22.16 | CCD-2 | 53-60 | 26.18 | CCD-3 | 66-73 | 29.42 |
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Table 4. Technical indicators and optical element parameters for imaging spectrometer
Simulation parameters for source with two angles |
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X half width /mm | Y half width /mm | X half angle /(°) | Y half angle /(°) | Power /W | Rays | 50 | 50 | 0.15 | 0.15 | 1 | 109 | Simulation spectral line-pairs for source with two angles | CCD-1 /nm | 40 & 40.0027 | 43.5 & 43.5027 | 47 & 47.0027 | CCD-2/nm | 53 & 53.0026 | 56.5 & 56.5026 | 60 & 60.0026 | CCD-3/nm | 66 & 66.0025 | 69.5 & 69.5025 | 73 & 73.0025 | Simulation parameters for CCDs | Material | X half width/mm | Y half width/mm | X /pixel | Y /pixel | Absorb | 20.8 | 14 | 3072 | 2048 |
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Table 5. Simulation parameters for ray tracing module in ZEMAX non-sequential mode
γ /(°) | d /nm | τ | N | δSiC-Al /nm | δAl-SiC /nm |
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88 | 26.4 | 0.31 | 30 | 2.1 | 0.9 |
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Table 6. Periodic SiC/Al multilayer film parameters