Implementation Methods for Amplitude Division Maskless Laser Interference Photolithography

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Opto-Electronic Engineering >Volume 31 >Issue 2 >Page 11 > Article

Opto-Electronic Engineering
Vol. 31, Issue 2, 11 (2004)

Implementation Methods for Amplitude Division Maskless Laser Interference Photolithography

[in Chinese]^1、2, [in Chinese]¹, and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. Implementation Methods for Amplitude Division Maskless Laser Interference Photolithography[J]. Opto-Electronic Engineering, 2004, 31(2): 11 Copy Citation Text

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References

[4] Bozler C O,Harris C T,Rabe S,et al.Arrays of gated field-emitter cones having 0.32μm tip-to tip spacing[J].J.Vac.Sci.Technol,1994,B12(2):629-632.

[5] Spallas J P,Hawryluk A M,Kania D R.Field emitter array mask patterning using laser interference lithography[J].J.Vac.Sci.Technol,1995,B13(5):1973-1978.

[6] Switkes M,Bloomstein T M,Rothschild M.Interference Lithography at 157nm[J].SPIE,2000,4000:1590-1593.

[7] Cowan J J.Holographic honeycomb microlens[J].Optical Engineering,1985,24(5):796-802.

[9] MacLeod B D,Kelsey A F,Leclerc M A,et al.Fully Automated Interference Lithography[J].SPIE,2002,4688:910-921.

[10] Choksi N,Pickard D S,McCord M,et al.Maskless extreme ultraviolet lithography[J].J.Vac.Sci.Tech,1999,B17(6):3047-3051.

[in Chinese], [in Chinese], [in Chinese]. Implementation Methods for Amplitude Division Maskless Laser Interference Photolithography[J]. Opto-Electronic Engineering, 2004, 31(2): 11

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