With the development of terahertz technology, low-temperature electronics and radio astronomy, the demand for integrated transimpedance amplifier chips working in low-temperature environment increases. The electrical performance of a Ge-Si based transimpedance amplifier in deep low temperature environment is studied. The current-voltage curves of the typical ports and gain curve of the amplifier chip at 8 K, and a relatively flat gain effect in the 0.1 GHz-3 GHz band are obtained. In order to verify its amplification function of terahertz photoelectric signal, GN1068 is integrated with terahertz Quantum-Well Photodetector(QWP), and a terahertz pulse laser detection system is built. A photoelectric signal, with a pulse width of 2 μs, is successfully amplified at 8 K. The transimpterahertzedance gain is about 560 Ω. The current amplification gain is 1.78 mA/V. The above results verify the feasibility of commercial transimpedance amplifier in deep low temperature environment for the first time, and provide an effective technical means for integrated transimpedance amplifier in the field of terahertz high-speed detection and high-frequency communication.