• Microelectronics
  • Vol. 53, Issue 1, 146 (2023)
LI Xiaoqi1, ZHAN Yongxin1、2, PAN Changkai1、2, WU Qiannan2、3, and LI Mengwei1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • show less
    DOI: 10.13911/j.cnki.1004-3365.220063 Cite this Article
    LI Xiaoqi, ZHAN Yongxin, PAN Changkai, WU Qiannan, LI Mengwei. Design of a L-E Band Hybrid SPDT RF MEMS Switch[J]. Microelectronics, 2023, 53(1): 146 Copy Citation Text show less

    Abstract

    Aiming at the problems of low-frequency band, high insertion loss, and low isolation in the application of traditional RF MEMS SPDT switch, a hybrid SPDT switch was designed. By setting the contact switch and capacitive switch in one path, low insertion loss and high isolation in the L-E band area unit were achieved. By coming up with the snake-like upper electrode structure, the elastic constant of the upper electrode was reduced, and therefore the driving voltage needed to drag down the upper electrode of the switch was reduced. HFSS simulation software system was employed to optimize the RF performance parameters of the hybrid SPDT switch, and COMSOL was employed to conduct stress-displacement analysis on the snake-like upper electrode of the switch. The simulation results show that, within the waveband of DC-90 GHz, the insertion loss of the SPDT switch area unit is lower than 1.5 dB @90 GHz, and the isolation is higher than 52 dB @67 GHz, 29 dB @90 GHz. This switch can be used in wireless communication systems, radar systems, instrument measurement systems, and other fields with high requirements for working frequency band.
    LI Xiaoqi, ZHAN Yongxin, PAN Changkai, WU Qiannan, LI Mengwei. Design of a L-E Band Hybrid SPDT RF MEMS Switch[J]. Microelectronics, 2023, 53(1): 146
    Download Citation