• Chinese Optics Letters
  • Vol. 17, Issue 4, 041301 (2019)
Kai Liu*, Qi Wei, Yongqing Huang, Xiaofeng Duan, Qi Wang, Xiaomin Ren, and Shiwei Cai
Author Affiliations
  • State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
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    DOI: 10.3788/COL201917.041301 Cite this Article Set citation alerts
    Kai Liu, Qi Wei, Yongqing Huang, Xiaofeng Duan, Qi Wang, Xiaomin Ren, Shiwei Cai. Integrated optoelectronic chip pair for transmitting and receiving optical signals simultaneously[J]. Chinese Optics Letters, 2019, 17(4): 041301 Copy Citation Text show less
    Structure of the proposed integrated optoelectronic chip.
    Fig. 1. Structure of the proposed integrated optoelectronic chip.
    Reflection spectra of the (a) top DBR and (b) bottom DBR that form the integrated chip, which emits light at a wavelength around 850 nm and receives light at a wavelength around 805 nm. In these figures, the length of the low Q cavity changes from −5% to +5% from its original value.
    Fig. 2. Reflection spectra of the (a) top DBR and (b) bottom DBR that form the integrated chip, which emits light at a wavelength around 850 nm and receives light at a wavelength around 805 nm. In these figures, the length of the low Q cavity changes from 5% to +5% from its original value.
    Reflection spectra of the (a) top DBR and (b) bottom DBR that form the integrated chip, which emits light at a wavelength around 805 nm and receives light at a wavelength around 850 nm. In these figures, the length of the low Q cavity changes from −5% to +5% from its original value.
    Fig. 3. Reflection spectra of the (a) top DBR and (b) bottom DBR that form the integrated chip, which emits light at a wavelength around 805 nm and receives light at a wavelength around 850 nm. In these figures, the length of the low Q cavity changes from 5% to +5% from its original value.
    VCSEL units’ static performances: (a) the chip transmitting light at a wavelength around 850 nm; (b) the chip transmitting light at a wavelength around 805 nm.
    Fig. 4. VCSEL units’ static performances: (a) the chip transmitting light at a wavelength around 850 nm; (b) the chip transmitting light at a wavelength around 805 nm.
    Spectral photo-response performances of the integrated chip pairs: (a) the chip transmitting light around a wavelength of 850 nm and receiving light at a wavelength around 805 nm; (b) the chip transmitting light around a wavelength of 805 nm and receiving light at a wavelength around 850 nm.
    Fig. 5. Spectral photo-response performances of the integrated chip pairs: (a) the chip transmitting light around a wavelength of 850 nm and receiving light at a wavelength around 805 nm; (b) the chip transmitting light around a wavelength of 805 nm and receiving light at a wavelength around 850 nm.
    Photo-response performances of the VCSEL unit with different input light intensities changing from 0 to 1000 W/cm2, while the VCSEL is not biased or biased at 1.5 and 1.7 V.
    Fig. 6. Photo-response performances of the VCSEL unit with different input light intensities changing from 0 to 1000W/cm2, while the VCSEL is not biased or biased at 1.5 and 1.7 V.
    Optically pumped VCSEL unit’s performance of the integrated chip pairs by the input light.
    Fig. 7. Optically pumped VCSEL unit’s performance of the integrated chip pairs by the input light.
    Simulated PIN-PD units’ dynamic performances of the integrated chip pairs.
    Fig. 8. Simulated PIN-PD units’ dynamic performances of the integrated chip pairs.
    Electric isolation capability between the chip pairs’ VCSEL units and their PIN-PD units deducted from the PIN-PD units’ dynamic performance analysis by comparing the VCSEL units’ photo-response currents with the PIN-PD units’ photo-response currents.
    Fig. 9. Electric isolation capability between the chip pairs’ VCSEL units and their PIN-PD units deducted from the PIN-PD units’ dynamic performance analysis by comparing the VCSEL units’ photo-response currents with the PIN-PD units’ photo-response currents.
    Simulated VCSEL units’ dynamic performances of the integrated chip pairs.
    Fig. 10. Simulated VCSEL units’ dynamic performances of the integrated chip pairs.
    Electric isolation capability between the chip pairs’ VCSEL units and their PIN-PD units deducted from the VCSEL units’ dynamic performance analysis by comparing the PIN-PD units’ photo-response currents with the VCSEL units’ driving currents.
    Fig. 11. Electric isolation capability between the chip pairs’ VCSEL units and their PIN-PD units deducted from the VCSEL units’ dynamic performance analysis by comparing the PIN-PD units’ photo-response currents with the VCSEL units’ driving currents.
    Kai Liu, Qi Wei, Yongqing Huang, Xiaofeng Duan, Qi Wang, Xiaomin Ren, Shiwei Cai. Integrated optoelectronic chip pair for transmitting and receiving optical signals simultaneously[J]. Chinese Optics Letters, 2019, 17(4): 041301
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