• Laser & Optoelectronics Progress
  • Vol. 58, Issue 23, 2314003 (2021)
Zekun Ma, Tao Lin*, Rongjin Zhao, Wanjun Sun, Yan Mu, Yaning Li, and Jianan Xie
Author Affiliations
  • School of Automation & Information Engineering, Xi'an University of Technology, Xi'an , Shaanxi 710048, China
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    DOI: 10.3788/LOP202158.2314003 Cite this Article Set citation alerts
    Zekun Ma, Tao Lin, Rongjin Zhao, Wanjun Sun, Yan Mu, Yaning Li, Jianan Xie. Research on Thermal Analysis Modeling of Semiconductor Laser Based on Package Prototype[J]. Laser & Optoelectronics Progress, 2021, 58(23): 2314003 Copy Citation Text show less
    Schematic diagram of chip and its package structure. (a) Main view; (b) top view
    Fig. 1. Schematic diagram of chip and its package structure. (a) Main view; (b) top view
    Results of steady-state thermal simulation of simple model. (a) Overall temperature distribution of model; (b) temperature distribution of active layer
    Fig. 2. Results of steady-state thermal simulation of simple model. (a) Overall temperature distribution of model; (b) temperature distribution of active layer
    Temperature distribution results of the simple model. (a) Temperature distribution at the front cavity surface; (b) temperature distribution along the cavity length direction; (c) temperature distribution in the vertical direction of the front cavity surface
    Fig. 3. Temperature distribution results of the simple model. (a) Temperature distribution at the front cavity surface; (b) temperature distribution along the cavity length direction; (c) temperature distribution in the vertical direction of the front cavity surface
    Simulation results of the average temperature of the active layerwith single influeice factor. (a) Stripe width; (b) thickness of copper layer on heat-sink; (c) number of bonding wires
    Fig. 4. Simulation results of the average temperature of the active layerwith single influeice factor. (a) Stripe width; (b) thickness of copper layer on heat-sink; (c) number of bonding wires
    Ccmparison of simple model and complex model. (a) Simple model; (b) complex model; (c) local enlargement view of internal structure of simple model chip; (d) local enlargement view of internal structure of complex model chip
    Fig. 5. Ccmparison of simple model and complex model. (a) Simple model; (b) complex model; (c) local enlargement view of internal structure of simple model chip; (d) local enlargement view of internal structure of complex model chip
    Results of steady-state thermal simulation of the complex model. (a) Overall temperature distribution of the model; (b) temperature distribution of the active layer
    Fig. 6. Results of steady-state thermal simulation of the complex model. (a) Overall temperature distribution of the model; (b) temperature distribution of the active layer
    Temperabure distribution results of the complex model. (a) Temperature distribution of front cavity surface; (b) temperature distribution along the cavity length direction; (c) temperature distribution in vertical direction of front cavity surfacee
    Fig. 7. Temperabure distribution results of the complex model. (a) Temperature distribution of front cavity surface; (b) temperature distribution along the cavity length direction; (c) temperature distribution in vertical direction of front cavity surfacee
    Output wavelength variation with injection current when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃
    Fig. 8. Output wavelength variation with injection current when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃
    Output wavelength varying with injection current at different heat sink surface temperatures. (a) Heat sink bottom temperature is 25 °C; (b) heat sink bottom temperature is 50 °C
    Fig. 9. Output wavelength varying with injection current at different heat sink surface temperatures. (a) Heat sink bottom temperature is 25 °C; (b) heat sink bottom temperature is 50 °C
    Device efficiency and device output power with injection current of 10 A. (a) Device efficiency: (b) device output power
    Fig. 10. Device efficiency and device output power with injection current of 10 A. (a) Device efficiency: (b) device output power
    Simulation results and experimental results of average temperature of active layer when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃. (a) Experimental results; (b) simulation results when the temperature of heat sink bottom surface is 25 ℃; (c) simulation results when the temperature of heat sink bottom surface is 50 ℃
    Fig. 11. Simulation results and experimental results of average temperature of active layer when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃. (a) Experimental results; (b) simulation results when the temperature of heat sink bottom surface is 25 ℃; (c) simulation results when the temperature of heat sink bottom surface is 50 ℃
    Eror between the experimental results and the simulation results of the two models when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃. (a) Heat sink bottom temperature is 25 ℃; (b) heat sink bottom temperature is 50 ℃
    Fig. 12. Eror between the experimental results and the simulation results of the two models when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃. (a) Heat sink bottom temperature is 25 ℃; (b) heat sink bottom temperature is 50 ℃
    LayerMaterialThickness /μmThermal conductivity /(W∙m-1∙K-1
    N-contactAu0.4315
    N-contactAu0.1315
    N-contactGe0.164
    N-contactNi0.160.7
    SubstrateGaAs10046
    Lower cladding layerAl0.5GaAs1.111
    Lower waveguide layerAl0.33GaAs0.612.04
    Active layerAl0.12Ga0.795In0.085As0.0084
    Upper waveguide layerAl0.33GaAs0.412.04
    Upper cladding layerAl0.5GaAs1.111
    CapGaAs0.1546
    Insulating layerSiO20.21.28
    P-contactTi0.117
    P-contactPt0.169.1
    P-contactAu0.1315
    P-contactAu0.4315
    SolderAuSn557
    CopperCu80398
    HeatsinkAlN460120
    Table 1. Structure and material parameters of each layer
    Zekun Ma, Tao Lin, Rongjin Zhao, Wanjun Sun, Yan Mu, Yaning Li, Jianan Xie. Research on Thermal Analysis Modeling of Semiconductor Laser Based on Package Prototype[J]. Laser & Optoelectronics Progress, 2021, 58(23): 2314003
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