Author Affiliations
School of Automation & Information Engineering, Xi'an University of Technology, Xi'an , Shaanxi 710048, Chinashow less
Fig. 1. Schematic diagram of chip and its package structure. (a) Main view; (b) top view
Fig. 2. Results of steady-state thermal simulation of simple model. (a) Overall temperature distribution of model; (b) temperature distribution of active layer
Fig. 3. Temperature distribution results of the simple model. (a) Temperature distribution at the front cavity surface; (b) temperature distribution along the cavity length direction; (c) temperature distribution in the vertical direction of the front cavity surface
Fig. 4. Simulation results of the average temperature of the active layerwith single influeice factor. (a) Stripe width; (b) thickness of copper layer on heat-sink; (c) number of bonding wires
Fig. 5. Ccmparison of simple model and complex model. (a) Simple model; (b) complex model; (c) local enlargement view of internal structure of simple model chip; (d) local enlargement view of internal structure of complex model chip
Fig. 6. Results of steady-state thermal simulation of the complex model. (a) Overall temperature distribution of the model; (b) temperature distribution of the active layer
Fig. 7. Temperabure distribution results of the complex model. (a) Temperature distribution of front cavity surface; (b) temperature distribution along the cavity length direction; (c) temperature distribution in vertical direction of front cavity surfacee
Fig. 8. Output wavelength variation with injection current when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃
Fig. 9. Output wavelength varying with injection current at different heat sink surface temperatures. (a) Heat sink bottom temperature is 25 °C; (b) heat sink bottom temperature is 50 °C
Fig. 10. Device efficiency and device output power with injection current of 10 A. (a) Device efficiency: (b) device output power
Fig. 11. Simulation results and experimental results of average temperature of active layer when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃. (a) Experimental results; (b) simulation results when the temperature of heat sink bottom surface is 25 ℃; (c) simulation results when the temperature of heat sink bottom surface is 50 ℃
Fig. 12. Eror between the experimental results and the simulation results of the two models when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃. (a) Heat sink bottom temperature is 25 ℃; (b) heat sink bottom temperature is 50 ℃
Layer | Material | Thickness /μm | Thermal conductivity /(W∙m-1∙K-1) |
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N-contact | Au | 0.4 | 315 | N-contact | Au | 0.1 | 315 | N-contact | Ge | 0.1 | 64 | N-contact | Ni | 0.1 | 60.7 | Substrate | GaAs | 100 | 46 | Lower cladding layer | Al0.5GaAs | 1.1 | 11 | Lower waveguide layer | Al0.33GaAs | 0.6 | 12.04 | Active layer | Al0.12Ga0.795In0.085As | 0.008 | 4 | Upper waveguide layer | Al0.33GaAs | 0.4 | 12.04 | Upper cladding layer | Al0.5GaAs | 1.1 | 11 | Cap | GaAs | 0.15 | 46 | Insulating layer | SiO2 | 0.2 | 1.28 | P-contact | Ti | 0.1 | 17 | P-contact | Pt | 0.1 | 69.1 | P-contact | Au | 0.1 | 315 | P-contact | Au | 0.4 | 315 | Solder | AuSn | 5 | 57 | Copper | Cu | 80 | 398 | Heatsink | AlN | 460 | 120 |
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Table 1. Structure and material parameters of each layer