The photoluminescence of four epitaxial ZnS∶Te samples with Te concentration from 0.5% to 3.1% was investigated at different temperature and ambient pressure. Two well-known emission bands related to the isolated Te 1 and Te 2 pair isoelectronic centers were observed for the samples with Te concentrations of 0.5% and 0.65%. For the samples with Te concentrations of 1.4% and 3.1%, only was the Te 2-related peak observed. The pressure behaviors of these emission bands were studied at 15K. The Te 1-related band has faster pressure shift to higher energy than ZnS band gap. On the other hand, the pressure coefficient of Te 2-related bands is smaller than that of the ZnS band gap. According to a Koster-Slater model, we found that the increase of the density bandwidth of the valence band with pressure is the main reason for the faster shift of the Te 1 centers, while the relatively large difference in the pressure behavior of the Te 1 and Te 2 centers is mainly due to the difference in the pressure-induced enhancement of the impurity potential on Te1 and Te2 centers.