INVESTIGATION ON InGaAs/InAlAs QUANTUM CASCADE LASERS ZHANG Quang-Sheng（National Integrated

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 20 >Issue 1 >Page 41 > Article

Journal of Infrared and Millimeter Waves
Vol. 20, Issue 1, 41 (2001)

INVESTIGATION ON InGaAs/InAlAs QUANTUM CASCADE LASERS ZHANG Quang-Sheng（National Integrated

[in Chinese]¹, [in Chinese]², [in Chinese]¹, [in Chinese]², [in Chinese]^3、4, and [in Chinese]⁴

Author Affiliations

¹[in Chinese]

²[in Chinese]

³Gao

⁴Physics Departimet, Lancaster University, UK

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. INVESTIGATION ON InGaAs/InAlAs QUANTUM CASCADE LASERS ZHANG Quang-Sheng（National Integrated[J]. Journal of Infrared and Millimeter Waves, 2001, 20(1): 41 Copy Citation Text

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Abstract

The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The device has a reinforced ridge waveguide structure. The threshold current obtained at 80K is about 0.5A, an d the corresponding threshold current density is about 5kA/cm².

Keywords

laser.subband transition quantum cascade

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