• Chinese Optics Letters
  • Vol. 18, Issue 7, 071401 (2020)
Zhongkai Zhang1,2, Zunren Lü1,2,*, Xiaoguang Yang1,2, Hongyu Chai1,2..., Lei Meng1,2 and Tao Yang1,2,**|Show fewer author(s)
Author Affiliations
  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/COL202018.071401 Cite this Article Set citation alerts
    Zhongkai Zhang, Zunren Lü, Xiaoguang Yang, Hongyu Chai, Lei Meng, Tao Yang, "25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C," Chin. Opt. Lett. 18, 071401 (2020) Copy Citation Text show less
    Schematic diagram of the InAs/GaAs QD lasers.
    Fig. 1. Schematic diagram of the InAs/GaAs QD lasers.
    PL spectra of the one-layer and the eight-layer QDs samples. The inset shows the surface AFM image of the surface QD layer for the eight-layer QD sample.
    Fig. 2. PL spectra of the one-layer and the eight-layer QDs samples. The inset shows the surface AFM image of the surface QD layer for the eight-layer QD sample.
    P–I curves of the laser at different temperatures from 20°C to 70°C. The inset shows the logarithmic threshold current as a function of temperature.
    Fig. 3. P–I curves of the laser at different temperatures from 20°C to 70°C. The inset shows the logarithmic threshold current as a function of temperature.
    Small signal frequency response curves of the InAs/GaAs QD laser, measured at different temperatures.
    Fig. 4. Small signal frequency response curves of the InAs/GaAs QD laser, measured at different temperatures.
    Eye diagrams of the InAs/GaAs QD laser at different temperatures.
    Fig. 5. Eye diagrams of the InAs/GaAs QD laser at different temperatures.
    Zhongkai Zhang, Zunren Lü, Xiaoguang Yang, Hongyu Chai, Lei Meng, Tao Yang, "25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C," Chin. Opt. Lett. 18, 071401 (2020)
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