25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75&#176;C

Zhongkai Zhang; Zunren Lü; Xiaoguang Yang; Hongyu Chai; Lei Meng; Tao Yang

doi:10.3788/COL202018.071401

Journals >Chinese Optics Letters >Volume 18 >Issue 7 >Page 071401 > Article

Chinese Optics Letters
Vol. 18, Issue 7, 071401 (2020)

25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C

Zhongkai Zhang^1、2, Zunren Lü^1、2、*, Xiaoguang Yang^1、2, Hongyu Chai^1、2, Lei Meng^1、2, and Tao Yang^1、2、**

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/COL202018.071401 Cite this Article Set citation alerts

Zhongkai Zhang, Zunren Lü, Xiaoguang Yang, Hongyu Chai, Lei Meng, Tao Yang. 25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C[J]. Chinese Optics Letters, 2020, 18(7): 071401 Copy Citation Text

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