25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75&#176;C

Zhongkai Zhang; Zunren Lü; Xiaoguang Yang; Hongyu Chai; Lei Meng; Tao Yang

doi:10.3788/COL202018.071401

Journals >Chinese Optics Letters >Volume 18 >Issue 7 >Page 071401 > Article

Chinese Optics Letters
Vol. 18, Issue 7, 071401 (2020)

25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C

Zhongkai Zhang^1,2, Zunren Lü^1,2,*, Xiaoguang Yang^1,2, Hongyu Chai^1,2..., Lei Meng^1,2 and Tao Yang^1,2,**|Show fewer author(s)

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/COL202018.071401 Cite this Article Set citation alerts

Zhongkai Zhang, Zunren Lü, Xiaoguang Yang, Hongyu Chai, Lei Meng, Tao Yang, "25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C," Chin. Opt. Lett. 18, 071401 (2020) Copy Citation Text

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