The Research Progress in Type II Superlattices Infrared Focal Plane Array Detectors

Junbin LI; Dongsheng LI; Shengjuan WU; Xuchang ZHOU; Yanhui LI; Chunzhang YANG; Wen YANG; Zhi JIANG; Chao CHANG; Yang REN

[1] Sai-halasz G A, Tsu R, Esaki L. A new semiconductor superlattice[J]. Appl. Phys. Lett., 1977, 30: 651.

[2] Sai-halasz G A, Esaki L, Harrison W A. InAs/GaSb superlattice energy structure and its semiconductor-semimetal transition[J]. Phys. Rev. B, 1978, 18: 2812.

[3] Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. J. Appl. Phys., 1987, 62: 2545.

[4] Johnson J L, Samoska L A, Gossard A C, et al. Electrical and optical properties of infrared photodiodes using the InAs/Ga1.xInxSb superlattice in heterojunctions with GaSb[J]. J. Appl. Phys., 1996, 80: 1116.

[5] Rogalski A, Kopytko M, Martyniuk P. InAs/GaSb type-II superlattice infrared detectors: three decades of development[C]//Proc. of SPIE, 2017, 10117: 1017715.

[6] Plis E A, InAs/GaSb type-II superlattice detectors[J]. Adv. Electron., 2014, 2014: 246769

[9] Walther M, Rehm R, Fuchs F, et al, 256×256 Focal Plane Array Midwavelength Infrared Camera Based on InAs/GaSb Short-Period Superlattices[J]. J. Electron. Mater., 2005, 34: 722.

[10] Rehm R, Walther M, Schmitz J, et al. 2nd and 3rd Generation Thermal Imagers based on Type-II Superlattice Photodiodes[C]//Proc. of SPIE, 2006, 6294: 629404.

[11] Pour S A, HUANG E K, CHEN G, et al. High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices[J]. Appl. Phys. Lett., 2011, 98: 143501.

[12] Sharifi H, Roebuck M, Terterian S, et al. Advances in III-V Bulk and Superlattice-based High Operating Temperature MWIR Detector Technology[C]//Proc. of SPIE, 2017, 10177: 101770U.

[13] TING D Z, Soibel A, Khoshakhlagh A, et al. Mid-w avelength high operating temperature barrier infrared detector and focal plane arrays[J]. Appl. Phys. Lett., 2018, 113: 021101.

[14] Ting D Z, Soibel A, Khoshakhlagh A, et al. Antimonide type-II superlattice barrier infrared detectors[C]// Proc. of SPIE, 2018, 10177: 101770N.

[15] Manurkar P, Ramezani-Darvish S, Nguyen B M, et al. High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices[J]. Appl. Phys. Lett., 2010, 97: 193505.

[16] Razeghi M, Haddadi A, Hoang A M, et al. Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems[J]. J. Electron. Mater., 2014, 43: 2802-2807.

[17] Gunapala S D, Ting D Z, Hill C J, et al. Demonstration of a 1024×1024 Pixel InAs-GaSb Superlattice Focal Plane Array[J]. IEEE Photonic Tech. Lett., 2010, 22: 1856.

[18] Ting D Z, Soibel A, Khoshakhlagh A, et al. Antimonide e-SWIR, MWIR, and LWIR barrier infrared detector and focal plane array development[C]//Proc. of SPIE, 2018, 10624: 1062410.

[19] Klipstein P C, Avnon E, Benny Y, et al. Type-II superlattice detector for long-wave infrared imaging[C]//Proc. of SPIE, 2015, 9451: 94510K.

[20] Rehm R, Walther M, Schmitz J, et al. Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range[J]. Electron. Lett., 2006, 42: 577.

[21] Wrl A, Rutz F, Rehm R, et al. Electro-Optical Properties of InAs/GaSb Superlattice Infrared Photodiodes for Bispectral Detection[C]// Proceedings IRS2, 2013: 37-42.

[22] Rutz F, Walther M, Schmitz J, et al. InAs/GaSb superlattices for advanced infrared focal plane arrays[J]. Infrared Phys. Techn., 2009, 52: 344.

[23] HUANG E K, HOANG M A, CHEN G, et al. Highly selective two-color mid-wave and long-wave infrared detector hybrid based on Type-II superlattices[J]. Opt. Lett., 2012, 37: 4744.

[24] Delaunay P Y, Nosho B Z, Gurga A R, et al. Advances in III-V Based Dual-Band MWIR/LWIR FPAs at HRL[C]//Proc. of SPIE, 2017, 10177: 101770T.

[25] Gurga A R, Nosho B Z, Terterian S, et al. Dual-Band MWIR/LWIR Focal Plane Arrays based on III-V Strained-Layer Superlattices[C]//Proc. of SPIE, 2018, 10624: 106240O.

[26] Hill C J, Li J V, Mumolo J M, Gunapala S D, MBE grown type-II MWIR and LWIR superlattice photodiodes[J]. Infrared Phys. Techn., 2007, 50: 187.

[27] Ting D Z, Hill C J, Soibel A, et al. A high-performance long wavelength superlattice complementary barrier infrared detector[J]. Appl. Phys. Lett., 2009, 95: 023508.

[28] Soibel A, Nguyen J, Hlund L, et al. InAs/GaSb superlattice based long-wavelength infrared detectors: Growth, processing, and characterization[J]. Infrared Phys. Techn., 2011, 54: 247.

[29] Hlund L, Soibel A, Ting D Z, et al. Minority carrier lifetime and photoluminescence studies of antimony based superlattices[C]//Proc. of SPIE, 2012, 8511: 851106.

[30] Ting D Z, Soibel A, Khoshakhlagh A, et al. Complementary barrier infrared detector (CBIRD) with double tunnel junction contact and quantum dot barrier infrared detector (QD-BIRD)[J]. Infrared Phys. Techn., 2013, 59: 146.

[31] Ting D Z, Soibel A, Gunapala S D, Hole effective masses and subband splitting in type-II superlattice infrared detectors[J]. Appl. Phys. Lett., 2016, 108: 183504.

[32] Ting D Z, Soibel A, Khoshakhlagh A, et al. Antimonide type-II superlattice barrier infrared detectors[C]//Proc. of SPIE, 2017, 10177: 101770N.

[33] Gunapala S D, TING D Z, Rafol S, et al. Antimonides T2SL Mid-Wave and Long-Wave Infrared Focal Plane Arrays for Earth Remote Sensing Applications[C]//Proc. of SPIE, 2020, 11288: 112880K.

[34] Wei Y, Gin A, Razeghi M, et al. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm[J]. Appl. Phys. Lett., 2002, 81: 3675.

[35] Nguyen B-M., Razeghi M, Nathan V, et al. Type-II “M” Structure Photodiodes: An Alternative Material Design for Mid-Wave to Long Wavelength Infrared Regimes[C]//Proc. of SPIE, 2007, 6479: 64790S.

[36] Delaunay P-Y, Nguyen B M, Hoffman D, et al. 320×256 infrared Focal Plane Array based on Type II InAs/GaSb superlattice with a 12 μm cutoff wavelength[C]//Proc. of SPIE, 2007, 6542: 654204.

[37] Livneh Y, Klipstein P C, Klin O, et al. k?p model for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices[J]. Phys. Rev. B, 2012, 86, 235311.

[38] Klipstein P C, Avnon E, Benny Y, et al. InAs/GaSb Type II superlattice barrier devices with a low dark current and a high quantum efficiency.[C]//Proc. of SPIE, 2014, 9070: 90700U.

[39] Grein C H, Garland J, Flatte M E. Strained and unstrained layer superlattices for infrared detection[J]. J. Electron. Mater., 2009, 38: 1800.

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