• Opto-Electronic Engineering
  • Vol. 33, Issue 1, 6 (2006)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Improvement on the radiometric temperature measurement in small laser-processing region[J]. Opto-Electronic Engineering, 2006, 33(1): 6 Copy Citation Text show less
    References

    [3] STRITZKER B,POSPIESZCZYK A,TAGLE J.A.Measurement of lattice temperature of silicon during pulsed laser annealing[J].Physical Review Letters,1981,47(5):356-358.

    [4] GUIDOTTI Daniel,WILMAN John G.Novel and nonintrusive optical thermometer[J].Appl.Phys.Lett,1992,60(5):524-526.

    [5] ZHOU Y.H,ZHANG Z.M,D.P.DeWITT,et al.Effects of radiative properties of surfaces on radiometric temperature measurement[A].9th int.Conference on Advanced Thermal Processing of Semiconductors-RTP'[C].Hilton Anchorage,Alaska:IEEE,2001.179-188.

    [11] RYU Zee M.Measurement of point spread function of thermal imager[J].SPIE,1991,1467:469-474.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Improvement on the radiometric temperature measurement in small laser-processing region[J]. Opto-Electronic Engineering, 2006, 33(1): 6
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