Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers

Weichuan Du; Junjie Kang; Yi Li; Hao Tan; Kun Zhou; Yao Hu; Liang Zhang; Zhao Wang; Linhui Guo; Songxin Gao; Deyong Wu; Chun Tang

doi:10.3788/AOS201939.0614002

Journals >Acta Optica Sinica >Volume 39 >Issue 6 >Page 0614002 > Article

Acta Optica Sinica
Vol. 39, Issue 6, 0614002 (2019)

Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers

Weichuan Du^1、2, Junjie Kang^1、2, Yi Li^1、2, Hao Tan^1、2, Kun Zhou^1、2、*, Yao Hu^1、2, Liang Zhang^1、2, Zhao Wang^1、2, Linhui Guo^1、2, Songxin Gao^1、2, Deyong Wu^1、2, and Chun Tang^1、2

Author Affiliations

¹ Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China

² The Key Laboratory of Science and Technology on High Energy Laser, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China

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DOI: 10.3788/AOS201939.0614002 Cite this Article Set citation alerts

Weichuan Du, Junjie Kang, Yi Li, Hao Tan, Kun Zhou, Yao Hu, Liang Zhang, Zhao Wang, Linhui Guo, Songxin Gao, Deyong Wu, Chun Tang. Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers[J]. Acta Optica Sinica, 2019, 39(6): 0614002 Copy Citation Text

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Optical characteristics of film samples under different processing conditions. (a) Transmission curve; (b) optical constant; (c) film thickness versus facet reflectivity

Fig. 1. Optical characteristics of film samples under different processing conditions. (a) Transmission curve; (b) optical constant; (c) film thickness versus facet reflectivity

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