[1] Shorter R. Night Vision: Exploring the Infrared Universe, by Michael Rowan-Robinson[J]. Contemporary Physics, 2013, 54(6): 304-305.
[4] Norton P. HgCdTe Infrared Detectors[J]. Opto-Electronics Review, 2002, 10(3): 159-174.
[5] Berding M A. Defects in ZnTe, CdTe, and HgTe: Total Energy Calculations[J]. Journal of Vacuum Ence & Technology, 1990, 8(2): 1103-1107.
[6] Berding M A, Schilfgaarde M V, Sher A. Hg0.8Cd0.2-Te Native Defects: Densities and Dopant Properties[J]. Journal of Electronic Materials, 1993, 22(8): 1005-1010.
[7] Berding M A, Schilfgaarde M V, Sher A. First-principles Calculation of Native Defect Densities in Hg0.8-Cd0.2Te[J]. Physical Review B, 1994, 50(3): 1519.
[8] Ciani A J, Ogut S, Batra I P. Concentrations of Native and Gold Defects in HgCdTe from First Principles Calculations[J]. Journal of Electronic Materials, 2004, 33(6): 737-741.
[9] Jozwikowski K, Kopytko M, Rogalski A, et al. Enhanced Numerical Analysis of Current-Voltage Characteristics of Long Wavelength Infrared n-on-p HgCdTe Photodiodes[J]. Journal of Applied Physics, 2010, 108(7): 880.
[11] Kinch M A , Aqariden F , Chandra D , et al. Minority Carrier Lifetime in p-HgCdTe[J]. Journal of Electronic Materials, 2005, 34(6): 880-884.
[14] Chu M, Terterian S, Wang P C, et al. Au-doped HgCdTe for Infrared Detectors and Focal Plane Arrays[C]. SPIE, 2001, 4454: 116.
[16] Selamet Y, Ciani A, Grein C H, et al. Extrinsic p-type Doping and Analysis of HgCdTe Grown by Molecular Beam Epitaxy[C]. SPIE, 2002, 4795: 8-16.
[17] Selamet Y, Singh R, Zhao J, et al. Gold Diffusion in Mercury Cadmium Telluride Grown by Molecular Beam Epitaxy[C]. SPIE, 2003, 5209: 67-74.
[20] Rogalski A, Antoszewski J, Faraone L. Third-generation Infrared Photodetector Arrays[J]. Journal of Applied Physics, 2009, 105(9): 344-348.
[21] Destefanis G, Chamonal J P. Large Improvement in HgCdTe Photovoltaic Detector Performances at LETI[J]. Journal of Electronic Materials, 1993, 22(8): 1027-1032.
[24] Wang J, Chen X, Hu W, et al. Temperature Dependence Characteristics of Dark Current for Arsenic Doped LWIR HgCdTe Detectors[J]. Infrared Physics & Technology, 2013, 61(5): 157-161.
[25] Chen A C, Zandian M, Edwall D D, et al. MBE Growth and Characterization of in Situ Arsenic Doped HgCdTe[J]. Journal of Electronic Materials, 1998, 27(6): 595-599.
[26] Edwall D, Piquette E, Ellsworth J, et al. Molecular Beam Epitaxy Growth of High-quality Arsenic-doped HgCdTe[J]. Journal of Electronic Materials, 2004, 33(6): 752-756.
[27] Madejczyk P, Gawron W, Martyniuk P, et al. MOCVD Grown HgCdTe Device Structure for Ambient Temperature LWIR Detectors[J]. Semiconductor Science & Technology, 2013, 28(10):105017.
[28] Madejczyk P, Gawron W, Kbowski A, et al. Higher Operating Temperature IR Detectors of the MOCVD Grown HgCdTe Heterostructures[J]. Journal of Electronic Materials, 2020, 49(11): 6908-6917.
[29] Izhnin I I, Mynbaev K D, Voitsekhovsky A V, et al. Arsenicion Implantation-induced Defects in HgCdTe Films Studied with Hall-effect Measurements and Mobility Spectrum Analysis[J].Infrared Physics&Technology, 2019,; ;;98: 230-235.
[30] Bonchyk O Y, Savytskyy H V, Izhnin I I, et al. Nano-size Defect Layers in Arsenic-Implanted and Annealed HgCdTe Epitaxial Films Studied with Transmission Electron Microscopy[J]. Applied Nanoence, 2020, 10: 4971-4976.