Mercury cadmium telluride materials are the basis for the manufacture of infrared detectors. High-performance detectors have increasingly higher requirements for mercury cadmium telluride materials. In order to improve the performance of the device, the electrical performance of the mercury cadmium telluride materials must be improved. Doping is a good choice. The doping of mercury cadmium telluride materials is divided into n-type and p-type doping. For n-type doping, In is an ideal dopant, and the current research on In doping is relatively mature. In comparison, the research on p-type doping is not so in-depth. Hg vacancy, Au and As doping are common p-type doping methods in mercury cadmium telluride materials. By analyzing and summarizing some relevant documents in recent years, the research progress of Hg vacancy, Au and As doping in HgCdTe materials is introduced.