Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering

Jingtao Zhu; Tao Zhou; Jie Zhu; Jiaoling Zhao; Hangyu Zhu

doi:10.3788/AOS202040.1431002

Journals >Acta Optica Sinica >Volume 40 >Issue 14 >Page 1431002 > Article

Acta Optica Sinica
Vol. 40, Issue 14, 1431002 (2020)

Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering

Jingtao Zhu¹, Tao Zhou¹, Jie Zhu^1、*, Jiaoling Zhao^2、3, and Hangyu Zhu¹

Author Affiliations

¹School of Physical Science and Engineering, Tongji University, Shanghai 200092, China

²Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

³Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

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DOI: 10.3788/AOS202040.1431002 Cite this Article Set citation alerts

Jingtao Zhu, Tao Zhou, Jie Zhu, Jiaoling Zhao, Hangyu Zhu. Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering[J]. Acta Optica Sinica, 2020, 40(14): 1431002 Copy Citation Text

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Fig. 1. Schematic of stress measurement

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Fig. 2. Schematic of ω and 2θ

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$XRR test and fitting curves of Al and Si for Si-doped 50% (mass fraction) Al-Si composite film. (a) Al film; (b) Si film$

Fig. 3. XRR test and fitting curves of Al and Si for Si-doped 50% (mass fraction) Al-Si composite film. (a) Al film; (b) Si film

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Fig. 4. Curvature for Al-Si composite films

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Fig. 5. Stress for Al-Si composite films

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$X-ray diffraction patterns of Al-Si composite films$

Fig. 6. X-ray diffraction patterns of Al-Si composite films

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Designed Si-doped mass fraction /%	Al thickness /nm	Si thickness /nm	Measured Si-doped mass fraction /%
0	28.31	-	0
10	27.34	3.12	8.97
20	25.43	5.82	16.49
30	20.35	9.38	28.46
50	15.27	14.91	45.73

Table 1. XRR fitting results of Al and Si films in Al-Si composite film

Si-doped mass fraction /%	Stress /MPa
0	-47.98
8.97	-35.91
16.49	-19.34
28.46	54.29
45.73	83.84

Table 2. Stress of Al-Si composite films

Si-doped mass fraction /%	Crystal orientation	Diffraction peak position /(°)	Grain size /nm
0	Al(111)	38.88	24.6
8.97	Al(111)	38.89	18.1
16.49	Al(111)	38.85	11.5
28.46	Al(111)	38.76	9.0
45.73	Al(111)	38.63	3.7

Table 3. Crystal orientation, diffraction peak position and grain size of Al-Si composite films

Jingtao Zhu, Tao Zhou, Jie Zhu, Jiaoling Zhao, Hangyu Zhu. Study on Stress in Si-Doped Al Thin Films Prepared by Magnetron Co-Sputtering[J]. Acta Optica Sinica, 2020, 40(14): 1431002

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