[1] Chang Guolong. The Study of the Influence of Radiation Effect on Laser Diodes[D]. Harbin: Harbin Institute of Technology, 2010. 65-72.
[2] Lu Guoguang, Huang Yun, En Yunfei. Lifetime estimation of high power lasers[C]. SPIE, 2010, 7844: 784413.
[4] Lorenzo Trevisanello, Matteo Meneghini, Maura Pavesi, et al.. Accelerated life test of high brightness light emitting diodes[J]. IEEE Transaction on Device and Materials Reliability, 2008, 8(2): 304-311.
[5] Nicola Trivellin, Matteo Meneghini, Enrico Zanoni, et al.. IEEE International Reliability Physics Symposium, Proceedings, A review on the reliability of GaN-based laser diodes[C]. 2010. IRPS10.
[6] Yu Fei, Jin Lei. Mathematical model of aging and the life test method for GaN LED[J]. Chinese J Lasers, 2011, 38(8): 0806001.
[7] Ding Ying, Wang Lufeng, Zhao Lingjuan, et al.. Reliability analysis of 1.55 μm DFB laser diodes for optical fiber communication[J]. Journal of Optoelectronics·Laser, 2004, 15(4): 393-396.
[8] Qian Minhua, Lin Yandan, Sun Yaojie. Life prediction model for LEDs based on the photo-electro-thermal-life theory[J]. Acta Optica Sinica, 2012, 32(8): 0823001.
[9] Dan Sporea. Effects of Gamma-ray irradiation on quantum-well semiconductor lasers[C]. Radiation Effects Data Workshop IEEE, 2004. 137-144.
[10] J Baggio, C Brisset, J L Sommer, et al.. Electrical and optical response of a laser diode to transient ionizing radiation[J]. IEEE Transactions on Nuclear Science, 1996, 43(3): 1038-1043.
[11] B D Evans, H E Hager, B W Hughlock. 5.5 MeV proton irradiation of a strained quantum-well laser diode and a multiple quantum-well broad-band LED[J]. IEEE Transactions on Nuclear Science, 1993, 40(6): 1645-1654.
[12] Y F Zhao, A R Patwary, R D Schrimpf, et al.. 200 MeV proton damage effects on multi-quantum well laser diodes[J]. IEEE Transactions on Nuclear Science, 1997, 44(6): 1898-1905.
[13] A H Johnston, T F Miyahira, B G Rax. Proton damage in advanced laser diodes[J]. IEEE Transactions on Nuclear Science, 2001, 48(6): 1764-1772.
[14] A H Johnston. Proton displacement damage in light-emitting and laser diodes[J]. IEEE Transactions on Nuclear Science, 2001, 48(5): 1713-1720.
[15] A H Johnston, T F Miyahira. Radiation degradation mechanisms in laser diodes[J]. IEEE Transactions on Nuclear Science, 2004, 51(6): 3564-3571.
[16] O Gilard. Theoretical study of radiation effects on GaAs/AlGaAs and InGaAsP/InP quantum well lasers[J]. Journal of Applied Physics, 2003, 93(4): 1884-1888.
[17] E C Auden, R A Weller, M H Mendenhall, et al.. Single particle displacement damage in silicon[J]. IEEE Transactions on Nuclear Science, 2012, 59(6): 3054-3061.
[18] Kitt Reinhardt. Radiation Effects on Emerging Electronic Materials and Devices[R]. Nashville: Vanderbilt University MURI Program Electrical Engineering and Computer Science Department, 2012.
[19] Huang Shaoyan, Liu Minbo, Tang Benqi, et al.. γ ray radiation effect on InGaAsP multi-quantum laser diodes and its component[J]. Atomic Energy Science and Technology, 2009, 43(11): 1024-1028.
[21] Y F Zhao, R D Schrimpf, A R Patwary. Annealing effects on multi-quantum well laser diodes after proton irradiation[J]. IEEE Transactions on Nuclear Science, 1998, 45(6): 2826-2832.
[22] D R Hughart, R D Schrimpf, D M Fleerwood, et al.. The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing[J]. IEEE Transactions on Nuclear Science, 2012, 59(6): 3087-3092.
[23] A H Johnston. Characterization of proton damage in light-emitting diodes[J]. IEEE Transactions on Nuclear Science, 2000, 47(6): 2500-2507.