• Chinese Journal of Lasers
  • Vol. 41, Issue 5, 502001 (2014)
Liu Yun1、*, Zhao Shanghong1, Yang Shengsheng2, Li Yongjun1, and Qiang Ruoxin1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/cjl201441.0502001 Cite this Article Set citation alerts
    Liu Yun, Zhao Shanghong, Yang Shengsheng, Li Yongjun, Qiang Ruoxin. Accelerated Life Testing Model of Laser Diodes under Space Radiation Stress[J]. Chinese Journal of Lasers, 2014, 41(5): 502001 Copy Citation Text show less

    Abstract

    By analyzing the radiation impact mechanism in space ennironment, the irradiated performance degradation and the annealing effect during radiation are achieved. On the basis, accelerated life testing model under radiation stress is established, the expressions of failure time, accelerate factor, cumulative distribution function, probability density function and mean time to failure are obtained. Degradation datas under the stresses of 100, 50 and 10 Gy/s are simulated, and parameters in the accelerated life testing model are estimated. The failure time under normal radiation stress (0.03 Gy/s) is 43862 h. Basing on Weibull distribution and the simulated data under the stress of 50 Gy/s, both cumulative distribution function and mean time to failure of laser diodes are calculated, the mean time to failure is about 39755.8 h.
    Liu Yun, Zhao Shanghong, Yang Shengsheng, Li Yongjun, Qiang Ruoxin. Accelerated Life Testing Model of Laser Diodes under Space Radiation Stress[J]. Chinese Journal of Lasers, 2014, 41(5): 502001
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