Temperature baking is one of the common methods of accelerating test. Vacuum baking experiment of HgCdTe short-wave infrared (SWIR) detectors at the room temperature was studied. The samples were divided into four groups, baking temperatures were 60 ℃, 70 ℃, 80 ℃ and 90 ℃, respectively. The R-V characteristics of the detectors at different baking temperature were analyzed. Results show that baking experiment causes the increase of series resistance, the decrease of tunneling current, and the increase of generation-recombination current mechanism according to the effect of temperatures on R-V curves. The increase of detectors contact resistance is caused by long time baking. On the other hand, the appropriate baking temperature can reduce the inner defect energy of the devices and reduce the effect of indirect tunneling current. Results also show that high temperature baking may damage the passivation layer and reduce the generation-recombination carrier lifetime.