GaN-based visible-blind UV detector and its research progress

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 21 >Issue 4 >Page 406 > Article

Chinese Journal of Quantum Electronics
Vol. 21, Issue 4, 406 (2004)

GaN-based visible-blind UV detector and its research progress

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. GaN-based visible-blind UV detector and its research progress[J]. Chinese Journal of Quantum Electronics, 2004, 21(4): 406 Copy Citation Text

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Abstract

Three kinds of visible-blind UV detector including p-i-n junction, Schottky barrier and MSM were reviewed. The operating principles, characteristics and research progress of these devices were introduced.

Keywords

p-i-n junction optoelectronics Schottky barrier UV detector

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. GaN-based visible-blind UV detector and its research progress[J]. Chinese Journal of Quantum Electronics, 2004, 21(4): 406

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