• Photonics Research
  • Vol. 9, Issue 9, 1796 (2021)
Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, and Kazuhiro Ohkawa*
Author Affiliations
  • Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
  • show less
    DOI: 10.1364/PRJ.428168 Cite this Article Set citation alerts
    Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa. 630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays[J]. Photonics Research, 2021, 9(9): 1796 Copy Citation Text show less
    References

    [1] Z. Y. Fan, J. Y. Lin, H. X. Jiang. III-nitride micro-emitter arrays: development and applications. J. Phys. D, 41, 094001(2008).

    [2] K. Ding, V. Avrutin, N. Izyumskaya, U. Ozgur, H. Morkoc. Micro-LEDs, a manufacturability perspective. Appl. Sci., 9, 1206(2019).

    [3] M. S. Wong, S. Nakamura, S. P. DenBaars. Review—progress in high performance III-nitride micro-light-emitting diodes. ECS J. Solid State Sci. Technol., 9, 015012(2019).

    [4] Z. Chen, S. Yan, C. Danesh. MicroLED technologies and applications: characteristics, fabrication, progress, and challenges. J. Phys. D, 54, 123001(2021).

    [5] S.-W. Huang Chen, C.-C. Shen, T. Wu, Z.-Y. Liao, L.-F. Chen, J.-R. Zhou, C.-F. Lee, C.-H. Lin, C.-C. Lin, C.-W. Sher, P.-T. Lee, A.-J. Tzou, Z. Chen, H.-C. Kuo. Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic layer deposition and nonradiative resonant energy transfer. Photon. Res., 7, 416-422(2019).

    [6] S.-W. H. Chen, Y.-M. Huang, K. J. Singh, Y.-C. Hsu, F.-J. Liou, J. Song, J. Choi, P.-T. Lee, C.-C. Lin, Z. Chen, J. Han, T. Wu, H.-C. Kuo. Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist. Photon. Res., 8, 630-636(2020).

    [7] J.-H. Kang, B. Li, T. Zhao, M. A. Johar, C.-C. Lin, Y.-H. Fang, W.-H. Kuo, K.-L. Liang, S. Hu, S.-W. Ryu, J. Han. RGB arrays for micro-light-emitting diode applications using nanoporous GaN embedded with quantum dots. ACS Appl. Mater. Interfaces, 12, 30890-30895(2020).

    [8] Z. Zhuang, J. Dai, B. Liu, X. Guo, Y. Li, T. Tao, T. Zhi, G. Zhang, Z. Xie, H. Ge, Y. Shi, Y. Zheng, R. Zhang. Improvement of color conversion and efficiency droop in hybrid light-emitting diodes utilizing an efficient non-radiative resonant energy transfer. Appl. Phys. Lett., 109, 141105(2016).

    [9] T. Kim, K.-H. Kim, S. Kim, S.-M. Choi, H. Jang, H.-K. Seo, H. Lee, D.-Y. Chung, E. Jang. Efficient and stable blue quantum dot light-emitting diode. Nature, 586, 385-389(2020).

    [10] J. M. Smith, R. Ley, M. S. Wong, Y. H. Baek, J. H. Kang, C. H. Kim, M. J. Gordon, S. Nakamura, J. S. Speck, S. P. DenBaars. Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter. Appl. Phys. Lett., 116, 071102(2020).

    [11] R. Horng, H. Chien, K. Chen, W. Tseng, Y. Tsai, F. Tarntair. Development and fabrication of AlGaInP-based flip-chip micro-LEDs. IEEE J. Electron Devices Soc., 6, 475-479(2018).

    [12] K. A. Bulashevich, S. Y. Karpov. Impact of surface recombination on efficiency of III-nitride light-emitting diodes. Phys. Status Solidi (RRL), 10, 480-484(2016).

    [13] J.-T. Oh, S.-Y. Lee, Y.-T. Moon, J. H. Moon, S. Park, K. Y. Hong, K. Y. Song, C. Oh, J.-I. Shim, H.-H. Jeong, J.-O. Song, H. Amano, T.-Y. Seong. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures. Opt. Express, 26, 11194-11200(2018).

    [14] M. S. Wong, J. A. Kearns, C. Lee, J. M. Smith, C. Lynsky, G. Lheureux, H. Choi, J. Kim, C. Kim, S. Nakamura, J. S. Speck, S. P. DenBaars. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Opt. Express, 28, 5787-5793(2020).

    [15] B. O. Jung, W. Lee, J. Kim, M. Choi, H.-Y. Shin, M. Joo, S. Jung, Y.-H. Choi, M. J. Kim. Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process. Sci. Rep., 11, 4535(2021).

    [16] F. Gou, E.-L. Hsiang, G. Tan, P.-T. Chou, Y.-L. Li, Y.-F. Lan, S.-T. Wu. Angular color shift of micro-LED displays. Opt. Express, 27, A746-A757(2019).

    [17] J. I. Hwang, R. Hashimoto, S. Saito, S. Nunoue. Development of InGaN-based red LED grown on (0001) polar surface. Appl. Phys. Express, 7, 071003(2014).

    [18] B. Damilano, B. Gil. Yellow-red emission from (Ga,In)N heterostructures. J. Phys. D, 48, 403001(2015).

    [19] K. Ohkawa, T. Watanabe, M. Sakamoto, A. Hirako, M. Deura. 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE. J. Cryst. Growth, 343, 13-16(2012).

    [20] K. Ohkawa, F. Ichinohe, T. Watanabe, K. Nakamura, D. Iida. Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys. J. Cryst. Growth, 512, 69-73(2019).

    [21] D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, K. Ohkawa. Demonstration of low forward voltage InGaN-based red LEDs. Appl. Phys. Express, 13, 031001(2020).

    [22] D. Iida, Z. Zhuang, P. Kirilenko, M. Velazquez-Rizo, M. A. Najmi, K. Ohkawa. 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress. Appl. Phys. Lett., 116, 162101(2020).

    [23] D. Iida, S. Lu, S. Hirahara, K. Niwa, S. Kamiyama, K. Ohkawa. Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers. J. Cryst. Growth, 448, 105-108(2016).

    [24] D. Iida, K. Niwa, S. Kamiyama, K. Ohkawa. Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure. Appl. Phys. Express, 9, 111003(2016).

    [25] S. Zhang, J. Zhang, J. Gao, X. Wang, C. Zheng, M. Zhang, X. Wu, L. Xu, J. Ding, Z. Quan, F. Jiang. Efficient emission of InGaN-based light-emitting diodes: toward orange and red. Photon. Res., 8, 1671-1675(2020).

    [26] Y. Kawaguchi, C. Y. Huang, Y. R. Wu, Y. J. Zhao, S. P. DenBaars, S. Nakamura. Semipolar (202¯1) single-quantum-well red light-emitting diodes with a low forward voltage. Jpn. J. Appl. Phys., 52, 08JC08(2013).

    [27] T. Wang. Topical review: development of overgrown semi-polar GaN for high efficiency green/yellow emission. Semicond. Sci. Technol., 31, 093003(2016).

    [28] Z. Bi, T. Lu, J. Colvin, E. Sjögren, N. Vainorius, A. Gustafsson, J. Johansson, R. Timm, F. Lenrick, R. Wallenberg, B. Monemar, L. Samuelson. Realization of ultrahigh quality InGaN platelets to be used as relaxed templates for red micro-LEDs. ACS Appl. Mater. Interfaces, 12, 17845-17851(2020).

    [29] Y. Chen. Plessey achieves native red InGaN LEDs on silicon for full color micro LED displays.

    [30] . Porotech launches first native red InGaN LED epiwafer for micro-LEDs.

    [31] S. S. Pasayat, C. Gupta, M. S. Wong, R. Ley, M. J. Gordon, S. P. DenBaars, S. Nakamura, S. Keller, U. K. Mishra. Demonstration of ultra-small (<10  μm) 632  nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays. Appl. Phys. Express, 14, 011004(2020).

    [32] A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A. M. Papon, B. Samuel, B. B. Bakir, D. Vaufrey, J. C. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta. Full InGaN red light emitting diodes. J. Appl. Phys., 128, 135704(2020).

    [33] Z. Zhuang, D. Iida, K. Ohkawa. Investigation of InGaN-based red/green micro-light-emitting diodes. Opt. Lett., 46, 1912-1915(2021).

    [34] N. C. Klapoetke, Y. Murata, S. S. Kim, S. R. Pulver, A. Birdsey-Benson, Y. K. Cho, T. K. Morimoto, A. S. Chuong, E. J. Carpenter, Z. Tian, J. Wang, Y. Xie, Z. Yan, Y. Zhang, B. Y. Chow, B. Surek, M. Melkonian, V. Jayaraman, M. Constantine-Paton, G. K.-S. Wong, E. S. Boyden. Independent optical excitation of distinct neural populations. Nat. Methods, 11, 338-346(2014).

    [35] Z. Zhuang, D. Iida, P. Kirilenko, M. Velazquez-Rizo, K. Ohkawa. Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes. Opt. Express, 28, 12311-12321(2020).

    [36] M. Wong, J. Speck, S. Nakamura, S. DenBaars. High efficiency of III-nitride and AlGaInP micro-light-emitting diodes using atomic layer deposition. Proc. SPIE, 11706, 117060B(2021).

    [37] M. S. Wong, C. Lee, D. J. Myers, D. Hwang, J. A. Kearns, T. Li, J. S. Speck, S. Nakamura, S. P. DenBaars. Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation. Appl. Phys. Express, 12, 097004(2019).

    [38] J. Back, M. S. Wong, J. Kearns, S. P. DenBaars, C. Weisbuch, S. Nakamura. Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length. Opt. Express, 28, 29991-30003(2020).

    [39] M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, M. A. Banas. Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes. Appl. Phys. Lett., 91, 231114(2007).

    [40] Z. Zhuang, D. Iida, M. Velazquez-Rizo, K. Ohkawa. 606-nm InGaN amber micro-light-emitting diodes with an on-wafer external quantum efficiency of 0.56%. IEEE Electron Device Lett., 42, 1029-1032(2021).

    [41] D. Hwang, A. Mughal, C. D. Pynn, S. Nakamura, S. P. DenBaars. Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs. Appl. Phys. Express, 10, 032101(2017).

    [42] C.-M. Kang, S.-J. Kang, S.-H. Mun, S.-Y. Choi, J.-H. Min, S. Kim, J.-P. Shim, D.-S. Lee. Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission. Sci. Rep., 7, 10333(2017).

    [43] Y. Robin, M. Pristovsek, H. Amano, F. Oehler, R. A. Oliver, C. J. Humphreys. What is red? On the chromaticity of orange-red InGaN/GaN based LEDs. J. Appl. Phys., 124, 183102(2018).

    CLP Journals

    [1] Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa. Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN[J]. Photonics Research, 2021, 9(12): 2429

    Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa. 630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays[J]. Photonics Research, 2021, 9(9): 1796
    Download Citation