STRAIN AND RELAXATION OF MBE-HgCdTe FILMS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 23 >Issue 5 >Page 325 > Article

Journal of Infrared and Millimeter Waves
Vol. 23, Issue 5, 325 (2004)

STRAIN AND RELAXATION OF MBE-HgCdTe FILMS

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STRAIN AND RELAXATION OF MBE-HgCdTe FILMS[J]. Journal of Infrared and Millimeter Waves, 2004, 23(5): 325 Copy Citation Text

show less

References

[1] Varesi J B, Bornfreund R E, Childs A C,et al. Fabrication of high-performance large-format MWIR focal plane arrays from MBE-Grown HgCdTe on 4" silicon substrates [J]. Journal of Electronic Materials , 2001, 30 : 566-573.

[2] Fewster P F. X-ray scattering from semiconductors[M]. London: Imperial College Press, 2000.

[3] Lam T T. Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe [J]. Journal of Electronic Materials, 2000, 29 : 804-808.

[4] Bartels W J, Nijman W. X-ray double-crystal diffractometry of Ga1-xAlxAs epitaxial layers [J]. Journal of Crystal Growth, 1978 , 44 : 518-525.

[5] Capper Peter. Properties of narrow gap cadmium based compounds [M]. England : Short Run Press Ltd, 1994, 399-412 & 41-43.

[6] Berding M A, Nix W D, Rhiger D R, et al. Critical thickness in the HgCdTe/CdZnTe system [J]. Journal of Electronic Materials, 2000 , 29 : 676-679.

[7] Nagai H.Structure of vapor-deposited GaxAl1-xAs crystals [J]. Journal of Applied Physics, 1974, 45 : 3789-3794.

Download Citation

Save the article for my favorites

Paper Information