• Infrared and Laser Engineering
  • Vol. 36, Issue 6, 785 (2007)
[in Chinese]1、2、*, [in Chinese]1, [in Chinese]1、2, [in Chinese]1, and [in Chinese]1
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Research and progress of optically pumped semiconductor verticalexternal-cavity surface-emitting lasers[J]. Infrared and Laser Engineering, 2007, 36(6): 785 Copy Citation Text show less
    References

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    [2] HASTIE J E,MORTON L G,KEMP A J,et al.Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser[J].Appfied Physics Letters,2006,89:061114.

    [3] BRICK P,LUTGEN S,ALBRECHT T,et al.Multi-Watt semiconductor disk lasers for near-infrared wavelengths[J].Semiconductor Lasers and Lasers Dynamics,2004,5452:226-229.

    [4] CHILLA J,BUTTERWORTH S,ZEITSCHEL A,et al.High power optically pumped semiconductor lasers[C]//Proceedings of the SPIE,Solid State Lasers XⅢ:Technology and Devices,2004,5332:143-146.

    [5] FAN L,FALLAHI M,HADER J,et al.Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and appfication as efficient fiber laser pump sources[J].Appfied Physics Letters,2005,86:211116.

    [6] Kim,Taek Yoo,Jaeryung Kim,et al.2 W continuous wave operation of optically pumped blue VECSEL with frequency doubling[c]//Proceedings of SPIE,Nanomanipulation with Light Ⅱ Edited by Andrews,David L,2006.6132:158-160.

    [7] SMITH S A,HOPKINS J M,HASTIE J E,et al.Diamondmicrochip GalnNAs vertical external-cavity surface-emitting laser operating CW at 1315 nm[J].Electronics Letters,2004,40(15):935-937.

    [8] SYMONDS C,SAGNES L,OUDAR J L,et al.Room temperatureCW operation at 1.55/spl mu/cm of a monolithic InPbased optically-pumped vertical-external-cavity surface-emitting lasers grown by MOCVD[C]//International Conference on Indium Phosphide and Related Materials,2003,12(16):259-260.

    [9] R(O)BNER K,H MMER M,LEHNHARDT T,et al.1 W antimonide-based vertical cxternal cavity surface emitting laser operating at 2 μm[J].Optic Express,2006,14(14):6479-6481.

    [10] ZHAO F,WU H,JAYASINGHE L,et al.Above-roomtemperature optically pumped 4.12 μm midinfrared verticalcavity surface-emitting lasers[J].Applied Physics Letters,2002,80(7):1129-1131.

    [11] HOOGLAND S,DHANJAL S,TROOPER A,et al.Passively mode-locked diode-pumped surface-emitting semiconductor laser[J].IEEE Phonics Technology Letlers,2000,12(9):1135-1137.

    [12] NIKITICHEV A A,STEPANOV A I.2-μm lasers for optical monitoring[J].J Opt Tedmol,1999,66(8):718-720.

    [13] CHILLA J L A,ZHOU H,WEISS E,et al.Blue & green optically-pumped semiconductor lasers for display[C]//Proceedings of SPIE,Projection Displays XI.Edited by Ming HWn,2005,5740:71-73.

    [14] SCHMID M,BENCHABANE S,TORABI-GOUDARZI F,et al.Optical in-well pumping of a vertical-external-cavity surface-emitting laser[J].Applied Physics Letters,2004,84(24):48604862.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Research and progress of optically pumped semiconductor verticalexternal-cavity surface-emitting lasers[J]. Infrared and Laser Engineering, 2007, 36(6): 785
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