The transient carrier dynamics of intrinsic CdTe was investigated by time-resolved femtosecond pump-probe reflection spectroscopy method (PPR) at different wavelengths and powers. The experimental results show that the percentage of the rapid process in carrier relaxation process grows with the increase of the pumped photon energy. The rapid process constant and reflectivity increase when the pumped optical power increases. The model of ultrafast carrier dynamics in intrinsic semiconductor was developed, and the effects of carrier initial scattering, carrier-LO phonon interaction and carrier trapping on carrier relaxation properties were analyzed. The curve of the PPR at the photon energy of 1.49 eV (～20 mV more than the band gap of CdTe ) is measured, the fast time constant and the slow one are 2.8 ps and 158.3 ps respectively.