Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy

Jiangpeng Dong; Kevin-P. Gradwohl; Yadong Xu; Tao Wang; Binbin Zhang; Bao Xiao; Christian Teichert; Wanqi Jie

doi:10.1364/PRJ.7.000518

Journals >Photonics Research >Volume 7 >Issue 5 >Page 518 > Article

Photonics Research
Vol. 7, Issue 5, 518 (2019)

Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy

Jiangpeng Dong¹, Kevin-P. Gradwohl², Yadong Xu^1、*, Tao Wang¹, Binbin Zhang¹, Bao Xiao¹, Christian Teichert², and Wanqi Jie¹

Author Affiliations

¹State Key Laboratory of Solidification Processing, Ministry of Industry and Information Technology (MIIT) Key Laboratory of Radiation Detection Materials and Devices, School of Materials and Engineering, Northwestern Polytechnical University, Xi’an 710072, China

²Institute of Physics, Montanuniversitaet Leoben, Leoben 8700, Austria

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DOI: 10.1364/PRJ.7.000518 Cite this Article Set citation alerts

Jiangpeng Dong, Kevin-P. Gradwohl, Yadong Xu, Tao Wang, Binbin Zhang, Bao Xiao, Christian Teichert, Wanqi Jie. Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy[J]. Photonics Research, 2019, 7(5): 518 Copy Citation Text

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