Power combining technology is an effective method to improve the output power of a system when the output power of a single amplifier does not meet the requirement of the system. In this paper, a new type of waveguide E-T junction power divider/combiner based on thin film resistor was studied in detail, and a novel waveguide E-T junction based on thin film resistor was designed. The structure has the advantages of high isolation, low insert loss, small size, and wide band. In order to increase the power which the waveguide E-T junction based on thin film resistor can bear, we try to increase the area of the thin film resistor by designing the length to width ratio of the thin film resistor reasonably, and use the aluminum nitride substrate with high thermal conductivity as the dielectric substrate of the microstrip and thin film resistor. The novel waveguide E-T junction based on thin film resistor was simulated in 3D electromagnetic simulation software HFSS. After testing, the insert loss was less than 0.2 dB, the return loss was better than-15 dB, the isolation was better than 10dB in 25~34 GHz. The measured results were consistent with the simulated results, and the structure has a good engineering application value.