• Infrared and Laser Engineering
  • Vol. 35, Issue 4, 429 (2006)
[in Chinese]1、2、*, [in Chinese]1, [in Chinese]1, [in Chinese]3, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Shear strain in MBE grown CdTe films on Si(211) substrates[J]. Infrared and Laser Engineering, 2006, 35(4): 429 Copy Citation Text show less
    References

    [1] VARESI J B,BORNFREUND R E,CHILDS A C,et al.Fabricaionof high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″silicon substrates[J].Journal of Electronic Materials,2001,30:559.

    [2] MARANOWSKI K D,PETERSON J M,JOHNSON S M,et al.MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays[J].Journal of Electronic Materials,2001,30:619.

    [3] Million A,Dhar N K,Dinan J H.Heteroepitaxy of CdTe on{211}Si substrates by molecular beam epitaxy[J].Journal of Crystal Growth,1996,159:76.

    [4] CAROL D,TAPFER L.Elastic lattice deformation of semiconductor heterostructures grown on arbitrarily oriented substrate surfaces[J].Phys Rev B,1993,48:2298.

    [5] FEWSTER P F.X-ray Scattering from Semiconductors[M].London:Imperial College Press,2000.

    [6] BO WEN D K,TANNER B K.High Resolution X-ray Diffractometry and Topography[M].London:Taylor & Francis Ltd,2001.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Shear strain in MBE grown CdTe films on Si(211) substrates[J]. Infrared and Laser Engineering, 2006, 35(4): 429
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