Research status and development trends of irradiation effects on memristor

Yuxiang WANG; Ge TANG; Yao XIAO; Xinyu ZHAO; Peng FENG; Wei HU

doi:10.11889/j.0253-3219.2022.hjs.45.110001

Journals >NUCLEAR TECHNIQUES >Volume 45 >Issue 11 >Page 110001 > Article

NUCLEAR TECHNIQUES
Vol. 45, Issue 11, 110001 (2022)

Research status and development trends of irradiation effects on memristor

Yuxiang WANG¹, Ge TANG^1、*, Yao XIAO¹, Xinyu ZHAO¹, Peng FENG², and Wei HU²

Author Affiliations

¹College of Nuclear Technology and Automation Engineering, Chengdu University of Technology, Chengdu 610059, China

²College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

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DOI: 10.11889/j.0253-3219.2022.hjs.45.110001 Cite this Article

Yuxiang WANG, Ge TANG, Yao XIAO, Xinyu ZHAO, Peng FENG, Wei HU. Research status and development trends of irradiation effects on memristor[J]. NUCLEAR TECHNIQUES, 2022, 45(11): 110001 Copy Citation Text

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Fig. 1. Mechanism of filament-type resistive switching

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Fig. 2. Mechanism of barrier modulation

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Fig. 3. Different radiation damage to memory resistance

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剂量率 Dose rate / rad(Si)∙s^-1	剂量率辐照暴露前后 Pre- and post-exposure	总剂量 Total ionizing dose / rad(Si)	器件状态 Device state
1×10⁸	暴露前Pre-exposure	10¹~10⁴	高阻态High-resistance state
1×10⁸	暴露后Post-exposure	10¹~10⁴	高阻态High-resistance state
4×10⁸	暴露前Pre-exposure	10¹~10³	高阻态High-resistance state
	暴露前Pre-exposure	10⁴	低阻态Low-resistance state
	暴露后Post-exposure	10¹	高阻态High-resistance state
	暴露后Post-exposure	10²~10⁴	低阻态Low-resistance state

Table 1. The pre- and post-exposure TaO _x state versus dose for different dose rates

忆阻器类型 Memristor type	电子能量 Electronic energy	通量 Fluence	结论 Conclusion	文献 References
TaO _x	20 MeV	5.0×10⁷~4.7×10⁸ rad(Si)∙s^-1	忆阻器功能正常 Memristor function is normal	[50, 53]
TaO _x	70 keV	1.0×10⁵~1.8×10⁷ rad(Si)∙s^-1	忆阻器功能正常 Memristor function is normal	[55]
PdSe₂	―	0~2 500 mC∙cm^-2	适当辐照可以提高忆阻器的稳定性 Proper irradiation can improve the stability of memristor	[56]
ReS₂	―	8 000 μC∙cm^-2, 6 000 μC∙cm^-2, 4 000 μC∙cm^-2, 0 μC∙cm^-2	辐照使器件产生S空位，从而具有电阻开关特性 Irradiation makes the device produce sulfur vacancies, so it has switching characteristics	[57]
BaTiO₃	100 kV	7.5×10¹⁵ e∙cm^-2	控制辐照可以使铁电薄膜具有忆阻特性 Controlled electron beam radiation, ferroelectric film of BaTiO₃ can be turned into a memristor	[58]

Table 2. Effects of electron irradiation on different types of memristors

忆阻器类型 Memristor type	离子类型 Ion type	能量 Energy	通量 Fluence	结论 Conclusion	文献 References
TiO₂	Bi离子Bi ions	941 MeV	23 Mrad(Si)	忆阻器功能正常 Memristor function is normal	[37, 39,40, 49, 55]
	Si离子Si ions	800 keV	0~7.5×10¹² ions∙cm^-2
	Ta离子Ta ions	800 keV	10⁹~10¹⁴ ions∙cm^-2
	Si离子Si ions	28 MeV	1×10⁷~1×10⁹ rad(Si)
	α 粒子α particle	1 MeV	10¹²~10¹⁵ ions∙cm^-2
TaO _x	Si离子Si ions	28 MeV	1×10⁷~1×10⁹ rad(Si)	忆阻器功能正常 Memristor function is normal	[49, 55]
TaO _x	Ta离子Ta ions	800 keV	10⁹~10¹⁴ ions∙cm^-2	忆阻器功能正常 Memristor function is normal	[49, 55]
La_2/3Ca_1/3MnO₃	O离子O ions	2 MeV	2×10¹⁴ ions∙cm^-2	忆阻器功能正常 Memristor function is normal	[60]
TiO₂	碳离子射线 Carbon ion beam	100 keV 10 keV	―	辐照导致器件中产生氧空穴，当氧离子到达电极，会产生氧气造成忆阻器功能破坏 Radiation induced appearance of oxygen vacancies, if the displaced oxygen ions reach the platinum electrodes, they can form O₂ gas and cause permanent disruption of memristor functionality	[61-62]
钙钛矿氧化物 Perovskite oxide memristors	硼离子束 B ion beam 磷离子束 P ion beam 氮离子束 N ion beam 氖离子束 Ne ion beam 碳离子束 C ion beam	50 keV 100 keV 100 keV 100 keV 100 keV	―		[63]
MoO _x	Ar离子 Ar ions	离子源 Ion source 电压300 V Voltage 300 V 电流10 mA Electric current 10 mA	4.97×10¹⁸ ions·s^-1·m^-2 (3 min, 5 min, 10 min)	辐照后MoO _x 忆阻器稳定性提升 Stability improvement of MoO _x memristor after irradiation	[64]
WO _x	Ar离子 Ar ions		4.97×10¹⁸ ions·s^-1·m^-2 (3 min, 5 min, 10 min)	辐照后WO _x 忆阻器的能耗降低 The energy consumption of WO _x memristor is reduced after irradiation	[64]
LiNbO₃	Ar离子 Ar ions	100 eV	离子源KDC40 Ion source KDC40	辐照可以改善LiNbO₃性能 Irradiation can improve the properties of LiNbO₃ thin films	[66]
		80 keV	离子源KDC40 Ion source KDC40		[67-68]
		80 eV	4.97×10¹⁸ ions·s^-1·m^-2		[69]

Table 3. Effects of ion irradiation on different types of memristors

Yuxiang WANG, Ge TANG, Yao XIAO, Xinyu ZHAO, Peng FENG, Wei HU. Research status and development trends of irradiation effects on memristor[J]. NUCLEAR TECHNIQUES, 2022, 45(11): 110001

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