• Laser & Optoelectronics Progress
  • Vol. 60, Issue 5, 0531003 (2023)
Zhuo Liu1、2, Youliang Zhang1, Gang Li1, Weisheng Yang1、*, Xueying Wang2, Qiming Xie1、**, and Xiaojing Yang2、***
Author Affiliations
  • 1Yunnan KIRO Photonics Co. Ltd, Kunming 650217, Yunnan, China
  • 2Faculty of Mechanical and Electrical Engineering, Kunming University of Science and Technology, Kunming 650500, Yunnan, China
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    DOI: 10.3788/LOP220737 Cite this Article Set citation alerts
    Zhuo Liu, Youliang Zhang, Gang Li, Weisheng Yang, Xueying Wang, Qiming Xie, Xiaojing Yang. Development of Longwave Infrared Antireflective Coating Based on As40Se60 Chalcogenide Glass[J]. Laser & Optoelectronics Progress, 2023, 60(5): 0531003 Copy Citation Text show less

    Abstract

    Infrared optical coatings deposited on the As40Se60 chalcogenide glass have the disadvantage of poor adhesion. The firmness of the coating has been a major research object to solve the problem of coating adhesion. First, the appropriate film source materials were chosen, and the design and optimization of the film system were completed. The single factor experiment was carried out with the deposition temperature as the influencing factor, and the deposition process and residual stress of the ZnS connection layer were examined. The method without an ion source was used to reduce the residual stress of the connection layer and improve film adhesion. Finally, the problem of coating adhesion at higher temperatures was solved. An infrared antireflective coating with an 8-12 μm wavelength was developed, and the deposition process was applied to practical production. The average transmittance and reflectance of the prepared film were 98% and 0.6%, respectively. The adhesion, high and low temperature, and humidity experiment met the requirements of the GJB2845—1995 standard.
    Zhuo Liu, Youliang Zhang, Gang Li, Weisheng Yang, Xueying Wang, Qiming Xie, Xiaojing Yang. Development of Longwave Infrared Antireflective Coating Based on As40Se60 Chalcogenide Glass[J]. Laser & Optoelectronics Progress, 2023, 60(5): 0531003
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