Yuqi REN, Yunfan YUE, Sheng LI, Nianyao CHAI, Xiangyu CHEN, Zhongle ZENG, Fengyi ZHAO, Huan WANG, Xuewen WANG. Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance[J]. Optics and Precision Engineering, 2024, 32(19): 2889
- Optics and Precision Engineering
- Vol. 32, Issue 19, 2889 (2024)
Fig. 1. Raman spectra of sample with femtosecond laser annealing
Fig. 2. SEM images of sample surface under different fluences
Fig. 3. Schematic diagram of I -V curve testing
Fig. 4. I -V characteristics of sample with different laser fluences and scanning spacings
Fig. 5. I-V characteristics of sample with different laser fluences and number of effective pulses
Fig. 6. EDS map analysis of 4H-SiC before and after laser annealing
Fig. 7. XPS spectra of 4H-SiC samples before and after annealing treatment
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Table 1. Parameters of 4H-SiC
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Table 2. Experimental setup for femtosecond laser annealing
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Table 3. Hall testing of 4H-SiC before and after annealing
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