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    Journals >Photonics Research >Volume 9 >Issue 7 >Page 1213 > Article
    • Photonics Research
    • Vol. 9, Issue 7, 1213 (2021)
    Nanohole array structured GaN-based white LEDs with improved modulation bandwidth via plasmon resonance and non-radiative energy transfer
    Rongqiao Wan1, Guoqiang Li2, Xiang Gao1, Zhiqiang Liu3、4, Junhui Li1, Xiaoyan Yi3、4、5、*, Nan Chi2、6、*, and Liancheng Wang1、7、*
    Author Affiliations
  • 1State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China
  • 2Department of Communication Science and Engineering, Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China
  • 3Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 4College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
  • 5e-mail: spring@semi.ac.cn
  • 6e-mail: nanchi@fudan.edu.cn
  • 7e-mail: liancheng_wang@csu.edu.cn
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    DOI: 10.1364/PRJ.421366 Cite this Article Set citation alerts
    Rongqiao Wan, Guoqiang Li, Xiang Gao, Zhiqiang Liu, Junhui Li, Xiaoyan Yi, Nan Chi, Liancheng Wang. Nanohole array structured GaN-based white LEDs with improved modulation bandwidth via plasmon resonance and non-radiative energy transfer[J]. Photonics Research, 2021, 9(7): 1213 Copy Citation Text show less
    Fabrication process of H-LEDs.
    Fig. 1. Fabrication process of H-LEDs.
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    (a) Top view SEM image of bare H-LED; (b) high magnification SEM image for the area marked by the red box in (a); (c) and (d) cross-sectional view of SEM image of bare nanoholes and nanoholes filled with QDs and Ag NPs, respectively.
    Fig. 2. (a) Top view SEM image of bare H-LED; (b) high magnification SEM image for the area marked by the red box in (a); (c) and (d) cross-sectional view of SEM image of bare nanoholes and nanoholes filled with QDs and Ag NPs, respectively.
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    (a) EL spectra of H-LED and absorption spectra of Ag NPs. (b) Decay curves of QWs of H-LED, QD-LED, and M-LED, respectively. (c) Possible energy transfer processes in the hybrid structure.
    Fig. 3. (a) EL spectra of H-LED and absorption spectra of Ag NPs. (b) Decay curves of QWs of H-LED, QD-LED, and M-LED, respectively. (c) Possible energy transfer processes in the hybrid structure.
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    (a) I-V characteristics of H-LED and Ag-LED. (b) Optical response of QD-LED and M-LED at 60 mA.
    Fig. 4. (a) I-V characteristics of H-LED and Ag-LED. (b) Optical response of QD-LED and M-LED at 60 mA.
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    (a) EL spectra of the QD-LED and M-LED under 20 mA; (b) optical power; (c) CRI; and (d) CIE-1931 chromaticity coordinates of QD-LED and M-LED versus current.
    Fig. 5. (a) EL spectra of the QD-LED and M-LED under 20 mA; (b) optical power; (c) CRI; and (d) CIE-1931 chromaticity coordinates of QD-LED and M-LED versus current.
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    (a) Data rate and BER of BPSK signal at different currents. (b) BER versus data rate of BPSK signal at 60 mA; insets: constellation diagrams at points (a), (b), (c), and (d).
    Fig. 6. (a) Data rate and BER of BPSK signal at different currents. (b) BER versus data rate of BPSK signal at 60 mA; insets: constellation diagrams at points (a), (b), (c), and (d).
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    (a) Data rate versus bandwidth; QAM order and SNR versus DMT subcarrier index of the (b) QD-LED and (c) M-LED. (d) Constellation diagrams.
    Fig. 7. (a) Data rate versus bandwidth; QAM order and SNR versus DMT subcarrier index of the (b) QD-LED and (c) M-LED. (d) Constellation diagrams.
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    Sampleτ1 (ns)τ2 (ns)
    H-LED1.2580.5
    QD-LED1.0779.6
    M-LED0.8573.0
    Table 1. Carriers’ Lifetime of QWs of H-LED, QD-LED, and M-LED
    View in the Article
    LED TypeCurrent DensityModulation SchemeData RateRefs.
    μLED + polymer color converter3  kA/cm2Orthogonal frequency division multiplexing (OFDM)1.68 Gb/s[8]
    Phosphorescent white LED—OFDM (bit and power loading)2.0 Gb/s[15]
    μLED + QDs1.1  kA/cm2Non-return-to-zero on–off keying (NRZ-OOK)300 Mb/s[9]
    Micro-LED + QDs10  kA/cm2NRZ-OOK675 Mb/s[5]
    No phosphor0.072  kA/cm2NRZ-OOK127 Mb/s[4]
    Nanohole-LED + QDs + Ag NPs0.096  kA/cm2DMT2.21 Gb/sThis work
    Table 2. Achievements Applying GaN-Based Single-Chip WLEDs
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    Rongqiao Wan, Guoqiang Li, Xiang Gao, Zhiqiang Liu, Junhui Li, Xiaoyan Yi, Nan Chi, Liancheng Wang. Nanohole array structured GaN-based white LEDs with improved modulation bandwidth via plasmon resonance and non-radiative energy transfer[J]. Photonics Research, 2021, 9(7): 1213
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