Si-Qi Jing, Xiao-Hua Ma, Jie-Jie Zhu, Xin-Chuang Zhang, Si-Yu Liu, Qing Zhu, Yue Hao. Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments[J]. Chinese Physics B, 2020, 29(10):
Abstract
Set citation alerts for the article
Please enter your email address