[1] Cales Thelander,Henrik A.Nilsson,Linus E.Jensen et al..Nanowires single-electron memory [J].Nano Letters,2005,5(4):635-638
[2] A.K.Srivastava,Pragya Tiwari,R.V.Nandedkar.TEM studies on the formation of nano crystallites of Si by metal induced crystallization [J].Solid State Commun.,2006,137(7):400-404
[3] D.K.Sarkar,S.Dhara,A.Gupta et al..Structural instability of the ion beam-mixed Au/Si (111) systems elevated temperatures [J].Nuclear Instrument and Methods in Physics Research B,2000,168(1):21-28
[4] E.Moyen,M.Mace,G.Agnus et al..Metal-rich Au-silicide nanoparticles for use in nanotechnology [J].Appl.Phys.Lett.,2009,94(23):233101
[5] J.S.Wu,S.Dhara,C.T.Wu et al..Growth and optical properties of self-organized Au2Si nanospheres pea-podded in a silicon oxide nanowire [J].Advanced Materials,2002,14(24):1847-1850
[6] Nicola Ferralis,Roya Maboudian,Carlo Carraro.Structure and morphology of annealed gold films galvanically displaced on the Si(111) [J].J.Phys.Chem.,2007,111(20):7508-7513
[7] K.Sekar,G.Kuri,P.V.Satyam et al..Shape transition in the epitaxial growth of silicide in Au thin films on Si(111) [J].Phys.Rev.B,1995,51(20):14330-14336
[8] R.Khalfaoui,C.Benazzouz,A.Guittoum et al..Irradiation-induced gold silicide formation and stoichiometry effects in ion beam-mixed layer [J].Vacuum,2006,81(1):45-48
[9] Liu Yaodong,Zhao Lei.Preparation of ZnO thin films by pulsed laser deposition [J].Chinese J.Lasers,2007,34(4):534-537
[12] D.Chan Lim,I.Lopez-Salido,R.Dietche et al..Defect formation of Au thin films on SiO2/Si upon annealing [J].Philosophical Magazine,2005,85(29):3477-3486
[13] Zhu Yongfa.Characterization and Testing Technique of Nano-materials [M].Beijing:Chemical Industry Press,2006,237-238
[14] B.Sundaravel,K.Sekar,G.Kuri et al..XPS and SIMS analysis of gold silicide grown on a bromine passivated Si(111) substrate [J].Applied Surface Science,1999,137(1-4):103-112
[15] Yuichi Haruyama,Kazuhiro Kanda,Shinji Matsui.Study of Au-Si(1 0 0) interface by means of Si 2p core-level photoemission spectroscopy [J].Journal of Electron Spectroscopy and Related Phenomena,2004,137-140:97-100
[16] R.S.Bauser,R.Z.Bachrach,L.J.Brillson.Au and Al interface reactions with SiO2 [J].Appl.Phys.Lett.,1980,37(11):1006-1008
[17] Joint Committee of Powder Diffraction Standards (JCPDS) card number 26-0723
[18] Soo Yang Yoon,Seong Jin Park,Kyung Ho Kim et al..Metal-induced crystallization of amorphous silicon [J].Thin Solid Films,2001,383(1-2):34-38
[19] J.F.Chang,T.F.Young,Y.L.Yang et al..Silicide formation of Au thin films on (100)Si during annealing [J].Mater.Chem.& Phys.,2004,83(2-3):199-203
[20] Johannes Biskupek,Ute Kaiser,Fritz Falk.Heat and electron beam induced transport of gold particles into silicon oxide and silicon studied by in situ high resolution transmission electron microscopy [J].J.Electron Microsc.,2008,57(3):83-89
[21] J.S.Wu,Y.F.Chen,S.Dhara et al..Interface energy of Au7Si grown in the interfacial layer of truncated hexagonal dipyramidal Au nanoislands on polycrystalline-silicon [J].Appl.Phys.Lett.,2003,82(25):4468-4470
[22] Ma Shuyi,Qin Guogang,You Liping et al..Comparative study on photoluminescence from Si-containing silicon oxide films and Ge-containing silicon oxide films [J].Acta Physica Sinica,2001,50(8):1580-1584
[23] R.S.Dubey,D.K.Gautam.Photoluminescence and structure morphology of nanostructured porous silicon [J].Chalcogenide Letters,2009,6(10):523-528
[24] Cao Xiaolong,Li Qinshan,Zhang Shufang.Investigation of photoluminescence spectra of silicon nanoparticles and porous silicon [J].Journal of Optoelectronics·Laser,2004,15(9):1113-1117
[25] A.S.Zyubin,Y.D.Glinka,A.M.Mebel et al..Red and near-infrared photoluminescence from silica-based nanoscale materials:Experimental investigation and quantum-chemical modeling [J].J.Chem.Phys.,2002,116(1):281-294
