[11] Talipov N K, Ovsyuk V N, Remesnik V G. Electrical Activation of Boron Implanted in p-HgCdTe (x=0.22) by Low-temperature Annealing Under an Anodic Oxide ［J］. Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 1997, 44(1-3): 266.
[12] Gopal V, Gupta S, Bhan R K, et al. Modeling of Dark Characteristics of Mercury Cadmium Telluride n+-p Junctions ［J］. Infrared Phys Technol, 2003, 44(2): 143-152.
[15] Fiorito G, Gasparrini G, Svelto F. Properties of Hg Implanted Hg1-xCdxTe Infrared Detectors ［J］. Applied Physics, 1978, 17(1): 105-110.
[16] Hua H, Xie X, Hu X. Analysis of Dark Current in Long-wavelength HgCdTe Junction Diodes at Low Temperature and an Approximate Method to Calculate the Trap Density of Depletion Region ［C］. SPIE, 2012, 8419: 8419A.
