Fig. 1. Structure of Mach-Zehnder interferometer (MZI)
Fig. 2. Relationship between input and output powers of each signal component in MWP link
[13] Fig. 3. Dual-tone test output RF spectrum of MWP link
[13] Fig. 4. Electrical predistortion method
[14] Fig. 5. Structure of polarization linear modulator
[18] Fig. 6. Structure diagram of double polarizer MZM
[19] Fig. 7. Dual polarization parallel MZM modulator
[21]. (a) Model schematic; (b) RF output power as a function of RF input power for dual-polarization modulator and traditional ODSB schemes
Fig. 8. Dual parallel MZI modulator based on polarization multiplexing
[22]. (a) Model schematic; (b) SFDR performance of multi-octave linearized link based on PM-DPMZM
Fig. 9. Enhanced linearized analog photonic link
[23]. (a) Schematic of enhanced linearity link and working points of sub-MZMs; (b) comparison of frequency spectra for two-tone test, where the left is traditional quadrature-biased link and the right is enhanced linearity link; (c) SFDR curves, where the left is traditional quadrature-biased link and the right is enhanced linearity link
Fig. 10. Schematics of double parallel and multistage parallel modulators. (a) Double parallel modulator
[24]; (b) multistage parallel modulator
[25] Fig. 11. Schematic of proposed linearity analog photonic link based on DPMZM
[29] Fig. 12. Structure diagram and microscopy image of double-parallel silicon MZM
[30] Fig. 13. Schematic of single integrated multiplex MZI modulator
[31] Fig. 14. Dual parallel MZM modulator based on phase shift
[32] Fig. 15. Schematic of series linearized modulator
[33] Fig. 16. Schematic and microscopy image of silicon double series MZM
[34]. (a) Schematic; (b) microscopy image
Fig. 17. Structure diagram of micro-ring resonator
Fig. 18. Structure diagram of RAMZM
Fig. 19. Schematic of a RAMZM with push-pull operation
[36] Fig. 20. Two different configurations of IMPACC
[37] Fig. 21. CMOS compatible silicon microring-assisted MZM
[38]. (a) Schematic of fabricated ring-assisted MZI modulator;(b) cross-section of waveguide; (c) top-view of fabricated modulator
Fig. 22. Optimized double microring assisted modulator
[39]. (a) Microscopic image; (b) measured SFDR curves at 1 GHz and 10 GHz
Fig. 23. Process flow of heterogeneous-integrated MZM on silicon
[40]. (a) Si-WG etch; (b) materials bonding; (c) Ⅲ-Ⅴ etch and N-contact; (d) metallization
Fig. 24. Structure and technological process of heterogeneous RAMAM on silicon
[41] Fig. 25. Reconfigurable silicon RAMZM
[12]. (a) Model schematic; (b) modulator chip packaged with a PCB
Fig. 26. Compact thin-film lithium niobate electro-optic modulator on silicon
[47]. (a) 1550 nm TE field; (b) 10 GHz RF field
Fig. 27. Si/LiNbO
3 hybrid ring modulator
[48]. (a) Structure diagram; (b) cross-section of device; (c) top-view optical micrograph of fabricated device; (d) SEM image of electrodes
Fig. 28. Structure schematic of Si/LiNbO
3 hybrid MZM
[49] Frequency | Amplitude |
---|
ω1 | 2I0J0m1J1m2 | ω2 | 2I0J0m2J1m1 | 2ω1-ω2 | 2I0J1m1J2m2 | 2ω2-ω1 | 2I0J1m2J2m1 | 3ω1 | 2I0J0m2J3m1 | 3ω2 | 2I0J0m1J3m2 |
|
Table 1. Frequency and corresponding amplitude of dual-tone signal
Processing domain | Linearization method | Basic principle | Advantage | Shortage |
---|
Electrical domain | Electronic predistortion | Introducing arcsine predistortion signal to RF signal | 1) Simple operation 2) Widely applicable | 1) High-speed electronic devices are required to accurately control distortion signals | Post compensation | A specific digital sampling method is used to cancel the distortion at the output | Only consider electronics problems | 2) Vulnerable to temperature drift and other unstable factors | Optical domain | Dual polarization control | Control the third-order distortion power of TE and TM light at same strength but opposite direction to cancel each other | Fundamentally solve the nonlinear problem of light in modulator | 1) It needs to precisely control the distribution of different polarization powers 2) Structure and control are complex | MZM series/parallel | Using one MZM to compensate the other one | 1) Wide optical band-width 2) High manufacturing and temperature tolerance | 1) High optical loss 2) Structure is relatively complex 3) Additional compensation | Microring-assisted MZM (RAMZM) | The superlinear phase modulation of the microring and the nonlinear cosine function caused by MZM can cancel each other | 1) Simple structure design 2) High linearity can be achieved | 1) Low manufacturing tolerance 2) Linearity is affected by the loss of microring |
|
Table 2. Common methods for linearization of electrooptical modulator
Reference | Structure | Insertion loss /dB | IMD3 decrement /dB | Floor noise /(dBm·Hz-1) | SFDRIMD3/dB·Hz2/3 |
---|
[11] | Silicon microring | 6 | | -168 | 84@1 GHz | [50] | Silicon MZM | 6.7 | | -165 | 96.3@1 GHz | [23] | PM-DPMZM | | 25.1 | -163.1 | 112.3@19 GHz | [31] | PM-DPMZM (control RF) | 6 | 33.7@15 GHz 30.5@20 GHz | -162 | 110.8@15 GHz 109.5@20 GHz | [32] | DPMZM (control bias) | | 45 | -170 | 116.8@12 GHz(simulation) | [34] | MZM series | 8 | | -156@1 GHz -152@10 GHz | 109.5@1 GHz 100.5@10 GHz | [39] | Double-ring RAMZM | | 29 | -160 | 106@1 GHz 99@10 GHz | [12] | Tunable RAMZM | 5 | 40 | -163 | 111.3@1 GHz | [41] | Heterogeneous RAMZI | 5 | | -60 | 117.5@1 GHz | [47] | LNOI MZM | | | -150 | 97.3@1 GHz 92.6@10 GHz | [49] | Si/LiNbO3 hybrid MZM | 2.5 | | -160 | 99.6@1 GHz 95.2@10 GHz | [51] | LNOI RAMZM | 10.5 | | -163.8@1 GHz -162.6@5 GHz | 120.04@1 GHz 114.54@5 GHz |
|
Table 3. Performance parameters of different modulator structures