Non-uniformity correction technique for amorphous silicon flat-panel detector

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Opto-Electronic Engineering >Volume 32 >Issue 8 >Page 36 > Article

Opto-Electronic Engineering
Vol. 32, Issue 8, 36 (2005)

Non-uniformity correction technique for amorphous silicon flat-panel detector

[in Chinese]^1、2, [in Chinese]³, and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. Non-uniformity correction technique for amorphous silicon flat-panel detector[J]. Opto-Electronic Engineering, 2005, 32(8): 36 Copy Citation Text

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References

[1] Richard L WEISFIELD,N Robert BENNETT. Electronic Noise Analysis of a 127-Micron Pixel TFT/Photodiode Array [J]. SPIE,2001,4320:209-218.

[2] Richard Van METTER,John YORKSTON. Factors Influencing Image Quality in Digital Radiographic System [J]. SPIE,2001,4320:244-255.

[3] M PARTRIDGE,B M HESSE,L MULLER. A performance comparison of direct-and indirect-detection flat-panel imagers [J]. Nuclear Instruments and Methods in Physics Research,2002,A 484(1-3):351-363.

[4] Richard L WEISFIELD,Mark A HARTNEY,Robert A STREET,et al. New amorphous-silicon image sensor for X-ray diagnostic medical imaging applications [J]. SPIE,1998,3336:444-452.

[5] Jean Pierre MOY,B BOSSET. How does real offset and gain correction affect the DQE in images from X-ray flat detectors [J]. SPIE,1999,3659:90-97.

[6] Norbert JUNG,P L ALVING,Falko BUSSE,et al. Dynamic X-ray imaging system based on an amorphous silicon thin-film array [J]. SPIE,1998,3336:396-407.

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[in Chinese], [in Chinese], [in Chinese]. Non-uniformity correction technique for amorphous silicon flat-panel detector[J]. Opto-Electronic Engineering, 2005, 32(8): 36

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