[1] S J PEARTON, A AITKALIYEVA, M H XIAN et al. Review- radiation damage in wide and ultra-wide bandgap semiconductors. ECS Journal of Solid State Science and Technology, 10, 055008(2021).
[2] R KONINGS, R STOLLER. Comprehensive Nuclear materials, 437-461(2020).
[3] A A CAMPBELL, W D PORTER, Y KATOH et al. Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 370, 49(2016).
[4] V IVÁDY, J DAVIDSSON, N T SON et al. Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide. Physical Review B, 96, 161114(2017).
[5] U GERSTMANN, E RAULS, T FRAUENHEIM et al. Formation and annealing of nitrogen-related complexes in SiC.. Physical Review B, 67, 205202(2003).
[6] A MATTAUSCH, M BOCKSTEDTE, O PANKRATOV. Thermally stable carbon-related centers in 6H-SiC: photoluminescence spectra and microscopic models. Physical Review B, 73, 161201(2006).
[7] W JIANG, H WANG, I KIM et al. Response of nanocrystalline 3C silicon carbide to heavy-ion irradiation. Physical Review B, 80, 161301(2009).
[8] Y LIU, G WANG, S C WANG et al. Defect-induced magnetism in neutron irradiated 6H-SiC single crystals. Physical Review Letters, 106, 087205(2011).
[9] T KOYANAGI, H WANG, O KARAKOC et al. Mechanisms of stored energy release in silicon carbide materials neutron-irradiated at elevated temperatures. Materials & Design, 214, 110413(2022).
[10] A CSÓRÉ, N MUKESH, G KÁROLYHÁZY et al. Photoluminescence spectrum of divacancy in porous and nanocrystalline cubic silicon carbide. Journal of Applied Physics, 131, 071102(2022).
[11] S S LIN. Light-emitting two-dimensional ultrathin silicon carbide. The Journal of Physical Chemistry C, 116, 3951(2012).
[12] X KERBIRIOU, J M COSTANTINI, M SAUZAY. Amorphization and dynamic annealing of hexagonal SiC upon heavy-ion irradiation: effects on swelling and mechanical properties. Journal of Applied Physics, 105, 073513(2008).
[13] Y KATOH, N HASHIMOTO, S KONDO et al. Microstructural development in cubic silicon carbide during irradiation at elevated temperatures. Journal of Nuclear Materials, 351, 228(2006).
[14] E Z JIN, L S NIU. Crystalline-to-amorphous transition in silicon carbide under neutron irradiation. Vacuum, 86, 917(2012).
[15] L L SNEAD, J C HAY. Neutron irradiation induced amorphization of silicon carbide. Journal of Nuclear Materials, 273, 213(1999).
[16] T YANO, H MIYAZAKI, M AKIYOSHI et al. X-ray diffractometry and high-resolution electron microscopy of neutron- irradiated SiC to a fluence of 1.9×1027 n/m2. Journal of Nuclear Materials, 253, 78(1998).
[17] H SUZUKI, T ISEKI, M ITO. Annealing behavior of neutron irradiated β-SiC. Journal of Nuclear Materials, 48, 247(1973).
[18] T SUZUKI, T MARUYAMA, T ISEKI. Recovery behavior in neutron irradiated β-SiC. Journal of Nuclear Materials, 149, 334(1987).
[19] L L SNEAD, Y KATOH, S CONNERY. Swelling of SiC at intermediate and high irradiation temperatures. Journal of Nuclear Materials, 367, 677(2007).
[20] T YANO, Y YOU, K KANAZAWA et al. Recovery behavior of neutron-irradiation-induced point defects of high-purity β-SiC. Journal of Nuclear Materials, 455, 445(2014).
[21] W ZHU, Y F RUAN, J CHEN et al. Annealing characteristics of heavy neutron-irradiated 6H-SiC crystal. Bulletin of the Chinese Ceramic Society, 31, 386(2012).
[22] F YANG, W P WANG, D WANG et al. Mechanical and optical property assessment of irradiated SiC with displaced atoms. Journal of the European Ceramic Society, 41, 4429(2021).
[23] K MILLER, Q ZHOU, J CHEN. Optical absorption of doped and undoped bulk SiC.. MRS Online Proceedings Library, 640, 523(2000).
[24] S K KIM, E Y JUNG, M H LEE. Defect-induced luminescence quenching of 4H-SiC single crystal grown by PVT method through a control of incorporated impurity concentration. Compounds, 2, 68(2022).
[25] E BIEDERMANN. The optical absorption bands and their anisotropy in the various modifications of SiC.. Solid State Communications, 3, 343(1965).
[26] R WEINGÄRTNER, M BICKERMANN, Z HERRO et al. Impact of compensation on optical absorption bands in the below band-gap region in n-type (N) 6H-SiC. Materials Science Forum, 433-436, 333(2003).
[27] R WEINGÄRTNER, P J WELLMANN, M BICKERMANN et al. Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements. Applied Physics Letters, 80, 70(2002).
[28] U GERSTMANN, E RAULS, T FRAUENHEIM et al. Formation and annealing of nitrogen-related complexes in SiC.. Physical Review B, 67, 205202(2003).
[29] M FUTSUHARA, K YOSHIOKA, O TAKAI. Structural, electrical and optical properties of zinc nitride thin films prepared by reactive RF magnetron sputtering. Thin Solid Films, 322, 274(1998).
[30] K WANG, L P YAN, K SHAO et al. Near-infrared afterglow enhancement and trap distribution analysis of silicon-chromium Co-doped persistent luminescence materials Zn1+xGa2-2xSixO4:Cr3+. Journal of Inorganic Materials, 34, 983(2019).
[31] D W FELDMAN, H JAMES, PARKER, R J et al. Phonon dispersion curves by Raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R. Physical Review, 173, 787(1968).
[32] P F WANG, L HUANG, W ZHU et al. Raman scattering of neutron irradiated 6H-SiC. Solid State Communications, 152, 887(2012).
[33] M J MADITO, T T HLATSHWAYO, C B MTSHALI. Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis. Applied Surface Science, 538, 148099(2021).
[34] J DAVIDSSON, V IVADY, R ARMIENTO et al. Identification of divacancy and silicon vacancy qubits in 6H-SiC. Applied Physics Letters, 114, 112107(2019).
[35] S SORIEUL, J M COSTANTINI, L GOSMAIN et al. Raman spectroscopy study of heavy-ion-irradiated ɑ-SiC. Journal of Physics: Condensed Matter, 18, 5235(2006).
[36] A J LEIDE, M J LLOYD, R I TODD et al. Raman spectroscopy of ion irradiated SiC: chemical defects, strain, annealing, and oxidation. https://arxiv.org/abs/2004.14335
[37] F C BEYER, C HEMMINGSSON, H PEDERSEN et al. Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC. Journal of Applied Physics, 109, 103703(2011).
[38] F C BEYER, C G HEMMINGSSON, H PEDERSEN et al. Capacitance transient study of a bistable deep level in e-irradiated n-type 4H-SiC. Journal of Physics D: Applied Physics, 45, 455301(2012).
[39] T BRODAR, L BAKRAČ, I CAPAN et al. Depth profile analysis of deep level defects in 4H-SiC introduced by radiation. Crystals, 10, 845(2020).
[40] T YANO, Y YOU, K KANAZAWA et al. Recovery behavior of neutron-irradiation-induced point defects of high-purity β-SiC. Journal of Nuclear Materials, 455, 445(2014).
[41] S C ZHANG, X H CUI, H F LIU et al. Investigation of the recovery process in low-dose neutron-irradiated 6H-SiC by lattice parameter and FWHM of diffraction peak measurements. Radiation Effects and Defects in Solids, 177, 800(2022).
[42] Z ZOLNAI, N T SON, C HALLIN et al. Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC. Journal of Applied Physics, 96, 2406(2004).
[43] T A G EBERLEIN, R JONES, S ÖBERG et al. Density functional theory calculation of the DI optical center in SiC.. Physical Review B, 74, 144106(2006).
[44] L TORPO, M MARLO, T E M STAAB et al. Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC. Journal of Physics: Condensed Matter, 13, 6203(2001).
[45] N T SON, I G IVANOV. Charge state control of the silicon vacancy and divacancy in silicon carbide. Journal of Applied Physics, 129, 215702(2021).
[46] A CSÓRÉ, N T SON, A GALI. Towards identification of silicon vacancy-related electron paramagnetic resonance centers in 4H-SiC. Physical Review B, 104, 035207(2021).
[47] J COUTINHO. Theory of the thermal stability of silicon vacancies and interstitials in 4H-SiC. Crystals, 11, 167(2021).
[48] R KARSTHOF, M E BATHEN, A GALECKAS et al. Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC. Physical Review B, 102, 184111(2020).
[49] B B HOU, Y F RUAN, L G LI et al. Optical properties and defect analysis of 6H-SiC crystals irradiated by heavy neutron. Journal of the Chinese Ceramic Society, 42, 349(2014).
