As a reversible, non-volatile, and resistive state mutation information storage and processing device, the resistive switching (RS) memory is expected to solve the inherent physical limitations of the traditional memory and von Neumann bottleneck, and has received widespread attention. Taking advantage of rapid carrier migration characteristics and excellent photoelectric conversion performance, halide perovskite optoelectronic RS memory devices present excellent resistive switching performance. In recent years, researches on storage and computing applications of the halide perovskite RS memory developed unprecedentedly; whereas, the working mechanisms of halide perovskite RS memory still remain unclear. This review analyzes the working mechanism of halide perovskite RS memory, compares the regulation characteristics of conduction filaments (CFs) and energy level matching (ELM), summarizes the constraints of various mechanisms, reveals the repeated formation and dissolution of CFs under light illumination and electric field, as well as Schottky barrier between the perovskite transfer layer and other layer, dominates the On/Off ratio, threshold (Set/Reset) voltage and performance stability of halide perovskite optoelectronic RS memory, and prospects the applications of halide perovskite RS memory in artificial intelligence bionic synapses, in-memory computing, and machine vision.