Zhu Xiaochun, Cao Gendi, Zhang Weizai, Wang Hailong. Pb1-xSnxTe and Pb1-ySnySe laser crystals[J]. Chinese Journal of Lasers, 1985, 12(1): 48
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This paper reports the Pb1-x SnxTe and Pb1-ySnySe crystals which have the suitable carrier concentration, low dislocation densities and a proper depth of P-N junction. The crystals have been directly obtained by a horizontal unseeded vapor growth technique at an ap-propriate controlling condition for crystal growth. They have been used in fabricating the CW tunable diode lasers.