[1] DONALD A R,STUART H,JAMES C,et al.Third generation imaging sensor system concepts[C]//Proceedings of SPIE,Infrared Imaging Systems:Design,Analysis,Modeling,and Testing X,1999,3701:108-117.
[2] SHIN S H,ARIAS J M,ZANDIAN M,et al.Enhanced arsenic diffusion and activation in HgCdTe[J]J Electron Mater,1995,24:609.
[3] ZANATTA J P,FERRET P,THERET G,et al.Heteroepitaxy of HgCdTe(211)B on Ge substrates by molecular beam epitaxy for infrared detectors[J].J Electron Mater,1998,27:542.
[4] DE LYON T J,RAJAVEL R D,JENSEN J E,et al.Heteroepitaxy of HgCdTe(112) infrared detector structures on Si (112) substrates by molecular beam epitaxy[J].J Electron Mater,1996,25:1341.
[5] ROGALSKI A.Dual-band infrared detectors[C]// Proceedings of SPIE,Photodetectors:Materials and Devices V,2000,3948:17-30.
[6] JOHNSON S M,Ames J B,AHLGREN W L,et al.Long Wavelength Semiconductor Devices,Materials and Processes,Materials Research Society Symposium Procd[C]//1991,216:141-149.
[8] WU Jun,WU Yan,CHEN Lu,et al.Sticking coefficient of as in molecular beam epitaxy of HgCdTe[J].Journal of Infrared and Millimeter Waves,2002,21(5):347-350.
[9] SIVANANTHAN S,WIJEWARNASURIYA P S,AQARIDEN F,et al.Mode of arsenic incorporation in HgCdTe grown by MBE[J].J Electron Mater,1997,26:621-624.
[10] SMITH E P G,GLEASON J K,PHAM L T,et al,Inductively coupled plasma etching of HgCdTe[J].J Electron Mater,2003,32:816.
[11] KELLER R C,MERMAN H,Seelmann-Eggebert M,et al.Dry etching of Hg1-xCdTe using CH4/H2/Ar/N2 electron cyclotron resonance plasmas[J].J Electron Mater,1996,25:1270
